| Part Number | Description |
|---|---|
 INCHANGE |
NPN Transistor perature Range -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD13009 ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CON |
 SeCoS |
NPN Transistor Low collector to emitter saturation voltage VCE(sat). Audio power amplifier High Current CLASSIFICATION OF hFE Product-Rank KTC3205-O Range 100~200 KTC3205-Y 160~320 TO-92L GH J AD 1Emitter 2Collector 3Base B K E CF REF. A B C D E F G H J |
 SavantIC |
Silicon NPN Power Transistors ion voltage IC=5A; IB=0.5A VBE Base-emitter voltage IC=5A ; VCE=5V ICBO Collector cut-off current VCB=120V; IE=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE DC current gain IC=1A ; VCE=5V fT Transition frequency IC=1A ; VCE=5V Cob Output |
 JILIN SINO-MICROELECTRONICS |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR z High breakdown voltage z High current capability z High switching speed z High reliability z RoHS product TO-3PB ORDER MESSAGE Order codes 3DD13009K-O-C-N-B 3DD13009K-O-AB-N-B Marking D13009K D13009K Halogen Free NO NO Package TO-220C |
 Toshiba Semiconductor |
Silicon NPN Transistor hin the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/"Derating Concept and Methods") and individual reliability data (i.e. reliability test |
 LGE |
NPN Transistor Low-Frequency power Amp, Electronic Governor Applications TO-92MOD 5.800 6.200 0.400 0.600 8.400 8.800 0.900 1.100 13.800 14.200 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Volt |
 NEC |
NPN SILICON POWER TRANSISTOR • Low saturation voltage VCE(sat) = 0.5 V MAX. (IC = −2 A, IB = 0.2 A) • Excellent hFE linearity and high hFE hFE = 60 to 400 (VCE = 2 V, IC = 1 A) • Less cramping space required due to small and thin package and reducing the trouble for attachment t |
 Toshiba |
Silicon NPN Transistor ition VCB = 230 V, IE = 0 VEB = 5 V, IC = 0 IC = 50 mA, IB = 0 VCE = 5 V, IC = 1 A VCE = 5 V, IC = 7 A IC = 8 A, IB = 0.8 A VCE = 5 V, IC = 7 A VCE = 5 V, IC = 1 A VCB = 10 V, IE = 0, f = 1 MHz Weight: 9.75 g (typ.) Min ― ― 230 55 35 ― ― ― ― Typ. ― |
 Fairchild Semiconductor |
NPN Silicon Transistor itance fT Current Gain Bandwidth Product tON Turn On Time tSTG Storage Time tF Fall Time * Pulse test: PW≤300µs, Duty cycle≤2% VEB = 9V, IC = 0 VCE = 5V, IC = 2A VCE = 5V, IC = 5A IC = 2A, IB = 0.4A IC = 5A, IB = 1A IC = 8A, IB = 2A IC = 2A, I |
 SEMTECH |
NPN Silicon Transistor at VCB = 50 V at VCB = 60 V Collector Base Breakdown Voltage at IC = 10 µA Collector Emitter Breakdown Voltage at IC = 10 mA Emitter Base Breakdown Voltage at IE = 10 µA Collector Emitter Saturation Voltage at IC = 150 mA, IB = 15 mA at IC = 500 mA, |