| Part Number | Description |
|---|---|
 SEMTECH |
PNP Silicon Transistor ector Emitter Saturation Voltage at -IC=100mA,-IB=10mA Base Emitter Voltage at –VCE=1V,-IC=100mA Transition Frequency at -VCE=6V, -IC=20mA Collector Output Capacitance at -VCB=6V, f=1MHz hFE hFE hFE hFE -ICBO -IEBO -VCEsat -VBE fT COB 70 120 2 |
 Sanken |
Silicon PNP Transistor .9±0.3 8.4±0.2 ø3.3±0.2 a b 3.9 ±0.2 0.8±0.2 13.0min 1.35±0.15 1.35±0.15 2.54 0.85 +0.2 -0.1 2.54 0.45 +0.2 -0.1 2.4±0.2 2.2±0.2 Weight : Approx 2.0g BCE a. Part No. b. Lot No. Collector Current IC(A) DC Current Gain hFE I C – V CE |
 SeCoS |
PNP Transistor Power Amplifier Applications MARKING A1020 Date Code RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 CLASSIFICATION OF hFE(1) Product-Rank A1020-O Range 70~140 A1020-Y 120~240 ORDER INFORMATION Part Number A1020 |
 Multicomp |
PNP Power Transistor Designed for use in general purpose power amplifier and switching applications. • Collector-emitter sustaining voltage-VCEO (sus) = 100V (minimum). • Collector-emitter saturation voltage-VCE (sat) = 1.5V (maximum) at IC = 6.0A. • Current gain-bandwi |
 ETC |
PNP SILICON TRANSISTOR |
 BLUE ROCKET ELECTRONICS |
PNP Transistor Complementary to KTC3205. MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current -Continuous PC Collector Power Dissipation T |
 GME |
PNP Silicon Transistor Low speed switching. Low saturation voltage. Excellent hFE linearity and high hFE. Complementary: D882. Pb Lead-free Production specification B772 APPLICATIONS Audio frequency power amplifier. TO-251 TO-252 MAXIMUM RATING @ Ta=25℃ unl |
 Toshiba Semiconductor |
Silicon PNP Transistor cause this product to decrease in the reliability significantly Weight: 0.21 g (typ.) even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliab |
 INCHANGE |
Silicon PNP Power Transistor a high hFE at low VCE(sat),which is ideal for use as a driver in DC/DC converters and actuators. i.cnABSOLUTE MAXIMUM RATINGS(Ta=25℃) .iscsemSYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V wwwVCEO Collector-Emitter Voltage |
 STMicroelectronics |
PNP MEDIUM POWER TRANSISTOR ■ High current ■ Low saturation voltage ■ Complement to 2SD882 Applications ■ Voltage regulation ■ Relay driver ■ Generic switch ■ Audio power amplifier ■ DC-DC converter Description The device is a PNP transistor manufactured by using planar Technol |