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| Datasheet |
 B719 Datasheet - 72.36KB |
| Part Number | Description |
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 Mospec Semiconductor |
2SB703 A Free Datasheet http://www.datasheet-pdf.com/ A Free Datasheet http://www.datasheet-pdf.com/ A Free Datasheet http://www.datasheet-pdf.com/ A Free Datasheet http://www.datasheet-pdf.com/ ... |
 SavantIC |
2SB707 ·With TO-220C package ·Complement to type 2SD568/569 APPLICATIONS ·For low frequency power amplifier low speed switching industrial use PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Product Specification 2SB707 2SB708 Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VCBO VCEO Collector-base voltage Collector-emitter voltage Open emitter 2SB707 2SB708 Open base VEBO Emitter-base voltage Open collector IC Collector current ICM Collector current-peak IB Base current PC Collector power dissipation Tj Junction temperature Tstg Storage temperature Ta=25 TC=25 VALUE -80 -60 -80 -7 -7 -15 -3.5 1.5 40 150 -55~150 UNIT V V V A A A W ... |
SavantIC |
2SB708 ·With TO-220C package ·Complement to type 2SD568/569 APPLICATIONS ·For low frequency power amplifier low speed switching industrial use PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Product Specification 2SB707 2SB708 Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VCBO VCEO Collector-base voltage Collector-emitter voltage Open emitter 2SB707 2SB708 Open base VEBO Emitter-base voltage Open collector IC Collector current ICM Collector current-peak IB Base current PC Collector power dissipation Tj Junction temperature Tstg Storage temperature Ta=25 TC=25 VALUE -80 -60 -80 -7 -7 -15 -3.5 1.5 40 150 -55~150 UNIT V V V A A A W ... |
 Panasonic Semiconductor |
2SB710 Transistors 2SB0710 (2SB710), 2SB0710A (2SB710A) Silicon PNP epitaxial planar type For general amplification Unit: mm Complementary to 2SD0602 (2SD602), 2SD0602A (2SD602A) ■ Features • Large collector current IC • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Collector-base voltage (Emitter open) 2SB0710 VCBO 2SB0710A −30 −60 Collector-emitter voltage 2SB0710 VCEO (Base open) 2SB0710A −25 −50 Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temper... |
 Hitachi |
2SB715 2SB715, 2SB716, 2SB716A Silicon PNP Epitaxial Application • Low frequency high voltage amplifier • Complementary pair with 2SD755, 2SD756 and 2SD756A Outline TO-92MOD 3 2 1 1. Emitter 2. Collector 3. Base 2SB715, 2SB716, 2SB716A Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 2SB715 –100 –100 –5 –50 750 150 –55 to +150 2SB716 –120 –120 –5 –50 750 150 –55 to +150 2SB716A –140 –140 –5 –50 750 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) 2SB715 2SB716 2SB... |
 Beijing Microelectronics |
Radiation-Hardened SRAM ................................................................................................................1 3. Block Diagram ........................................................................................................................2 4. Pin Description........................................................................................................................2 5. Pin Configurations（Appendix 1） .................................................................... |
 Hitachi Semiconductor |
2SB716 2SB715, 2SB716, 2SB716A Silicon PNP Epitaxial Application • Low frequency high voltage amplifier • Complementary pair with 2SD755, 2SD756 and 2SD756A Outline TO-92MOD 3 2 1 1. Emitter 2. Collector 3. Base 2SB715, 2SB716, 2SB716A Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 2SB715 –100 –100 –5 –50 750 150 –55 to +150 2SB716 –120 –120 –5 –50 750 150 –55 to +150 2SB716A –140 –140 –5 –50 750 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) 2SB715 2SB716 2SB... |
Hitachi |
2SB716A 2SB715, 2SB716, 2SB716A Silicon PNP Epitaxial Application • Low frequency high voltage amplifier • Complementary pair with 2SD755, 2SD756 and 2SD756A Outline TO-92MOD 3 2 1 1. Emitter 2. Collector 3. Base 2SB715, 2SB716, 2SB716A Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 2SB715 –100 –100 –5 –50 750 150 –55 to +150 2SB716 –120 –120 –5 –50 750 150 –55 to +150 2SB716A –140 –140 –5 –50 750 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) 2SB715 2SB716 2SB... |
Hitachi |
Silicon PNP Transistor ... |
Hitachi |
Silicon PNP Transistor ... |
 Amerace Electronic Components |
(B71Nxxxx) Header / PCB Mount ... |
Amerace Electronic Components |
(B71Nxxxx) Header / PCB Mount ... |
Amerace Electronic Components |
(B71Nxxxx) Header / PCB Mount ... |
SavantIC |
2SB722 ·With TO-3 package ·High current capability ·High power dissipation APPLICATIONS ·For power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VCBO VCEO Collector-base voltage Collector-emitter voltage Open emitter Open base VEBO IC IB PC Tj Emitter-base voltage Open collector Collector current Base current Collector power dissipation TC=25 Junction temperature Tstg Storage temperature VALUE -160 -160 -5 -15 -4 150 150 -55~200 UNIT V V V A A W SavantIC Semiconductor Silicon PNP Power Transistors www.DataSheet4U.com CHARACTERISTICS Tj=25... |
 EPCOS |
(B722xx) Leaded Varistors of coding system on page 39, chapter “ General Technical Information” SIOV-S 14 K 130 G5 S5 EPCOS metal oxide varistor Design Rated diameter of varistor disk Crimp style Taping mode Max. AC operating voltage Tolerance of varistor voltage General technical data Climatic category LCT UCT Damp heat, steady state (93 % r.h., 40 °C) Operating temperature Storage temperature Electric strength Insulation resistance Response time 40/85/56 – 40 °C + 85 °C 56 days – 40 … + 85 °C – 40 … + 125 °C in accordance with IEC 60068-1 in accordance with IEC 60068-2-3 in accordance with CECC 42 000 in accordance with CECC 42 000 in accordance with CECC 42 000 ³ 2,5 kVRMS ³ 10 MW < 25 ns 159 04/02 Leaded V... |
 TDK |
SIOV metal oxide varistors SIOV metal oxide varistors Leaded varistors, StandarD series Series/Type: Date: B722* March 2018 © EPCOS AG 2018. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited. EPCOS AG is a TDK Group Company. Leaded varistors StandarD series B722* Construction Round varistor element, leaded Coating: epoxy resin, flame-retardant to UL 94 V-0 Terminals: tinned wire Features Wide operating voltage range 11 … 1100 VRMS High surge current ratings up to 8 kA No derating up to 105 °C ambient temperature PSpice models Approvals UL CSA (all types ≥ K115) VDE CQC S05/07 (K11 … K460), S1... |