| Description | The SDB628 is a constant frequency, 6-pin SOT23 current mode step-up converter intended for small, low power applications. The SDB628 switches at 1.2MHz and allows the use of tiny, low cost capacitors and inductors 2mm or less in height. Internal soft-start results in small inrush current and extend... |
| Features |
• Integrated 80mΩ Power MOSFET • 2V to 24V Input Voltage • 1.2MHz Fixed Switching Frequency • Internal 4A Switch Current Limit • Adjustable Output Voltage • Internal Compensation • Up to 28V Output Voltage • Automatic Pulse Frequency Modulation Mode at Light Loads • up to 97% Efficiency • Available in a 6-Pin SOT23-6 Package APPLICATIONS • Battery-Powered Equipment • Set-Top Boxed • LCD Bais Supply • DSL and Cable Modems and Routers • Networking cards powered from PCI or PCI express slots SDB628 High Efficiency 1.2MHz 2A Step Up Converter GENERAL DESCRIPTION The SDB628 is a constant frequency... |
| Datasheet |
 SDB628 Datasheet - 2.16MB |
| Part Number | Description |
|---|---|
 SamHop Microelectronics |
N-Channel Logic Level E nhancement Mode Field E ffect Transistor S DP /B 60N03L S amHop Microelectronics C orp. May,2004 ver1.1 N-Channel Logic Level E nhancement Mode Field E ffect Transistor 4 P R ODUC T S UMMAR Y V DS S 30V F E AT UR E S S uper high dense cell design for extremely low R DS (ON). High power and current handling capability. TO-220 & TO-263 package. ID 56A R DS (on) ( m W ) Max 11 @ V G S = 10V 19 @ V G S = 4.5V D D G D S G S G S DP S E R IE S TO-220 S DB S E R IE S TO-263(DD-P AK) S ABS OLUTE MAXIMUM R ATINGS (TC =25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous -P ulsed a S ymbol V DS V GS @ TJ=125 C ID IDM IS PD T J , T S TG Limit 30 20 56 168 60 75 -65 to 175 U... |
SamHop Microelectronics |
N-Channel Logic Level E nhancement Mode Field E ffect Transistor S DP /B 65N03L S amHop Microelectronics C orp. S eptember , 2002 N-Channel Logic Level E nhancement Mode Field E ffect Transistor 4 P R ODUC T S UMMAR Y V DS S 30V F E AT UR E S ( m W ) TYP ID 65A R DS (on) S uper high dense cell design for extremely low R DS (ON). High power and current handling capability. TO-220 & TO-263 package. 8 @ V G S = 10V 12 @ V G S = 4.5V D D G D S G S G S DP S E R IE S TO-220 S DB S E R IE S TO-263(DD-P AK) S ABS OLUTE MAXIMUM R ATINGS (TC =25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous -P ulsed a S ymbol V DS V GS @ TJ=125 C ID IDM IS PD T J , T S TG Limit 30 20 65 195 65 75 0.5 -65 to... |