| Description | SHENZHEN YANGJING MICROELECTRONICS CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS SI2301 P-Channel 20-V(D-S) MOSFET FEATURE TrenchFET Power MOSFET APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: A11 SHB SOT-23 1. GATE 2. SOURCE 3. DRAIN Maximum ratings (Ta=25℃ unless othe... |
| Features |
TrenchFET Power MOSFET
APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter
MARKING: A11
SHB
SOT-23
1. GATE 2. SOURCE 3. DRAIN
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Thermal Resistance from Junction to Ambient(t ≤5s) Junction Temperature Storage Temperature
VDS VGS ID IDM IS PD R θJA TJ Tstg
Value
-20 ±8 -2.3 -10 -0.72 0.35 357 150 -55 ~+150
Unit V
A
W ℃/W
℃
YANGJING MICROELECTRONICS
www.szyangj...
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| Datasheet |
 A1SHB Datasheet - 510.47KB |
| Part Number | Description |
|---|---|
 H&M Semiconductor |
P-Channel Trench Power MOSFET The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -20V,ID = -2.5A RDS(ON) < 160mΩ @ VGS=-2.5V RDS(ON) < 120mΩ @ VGS=-4.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package D G S Schematic diagram A1SHB Marking and pin assignment Application ● PWM applications ● Load switch SOT-23 top view Package Marking and Ordering Information Device Marking Device Device Package A12SHB HM2301B SOT-23 Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolu... |
 Bruckewell |
P-Channel Enhancement Mode Power MOSFET The MS23P01S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -20V,ID = -2.6A RDS(ON) < 160mΩ @ VGS=-2.5V RDS(ON) < 120mΩ @ VGS=-4.5V D G S Schematic diagram ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Marking and pin assignment Application ● PWM applications ● Load switch SC70-3/ SOT-323 top view Package Marking and Ordering Information Device Marking Device Device Package A1SHB MS23P01S SOT-23 Reel Size Ø180mm Tape width 8 mm Quantity 3000 units ... |
 Vanguard Semiconductor |
P-Channel Advanced Power MOSFET VS2301BC-A -20V/-3A P-Channel Advanced Power MOSFET Features P-Channel Enhancement mode Fast Switching Pb-free lead plating; RoHS compliant; Halogen free V DS R DS(on),TYP @VGS=-4.5V R DS(on),TYP @VGS=-3.3V R DS(on),TYP @VGS=-2.5V ID -20 V 86 mΩ 94 mΩ 106 mΩ -3 A SOT23 Part ID V2301BC-A Package Type SOT23 Marking A1SHB Tape and reel information 3000pcs/reel Maximum ratings, at T A =25 °C, unless otherwise specified Symbol Parameter V(BR)DSS VGS Drain-Source breakdown voltage Gate-Source voltage IS Diode continuous forward current ID Continuous drain current @VGS=-4.5V IDM Pulse drain current tested ① PD Maximum power dissipation TSTG , TJ Storage and j... |
 Kexin |
P-Channel MOSFET SMD Type P-Channel Enhancement MOSFET SI2301 (KI2301) MOSFET ■ Features ● VDS (V) =-20V ● RDS(ON) ＜ 100mΩ (VGS =-4.5V) ● RDS(ON) ＜ 150mΩ (VGS =-2.5V) G1 S2 3D +0.22.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.21.1 -0.1 +0.21.6 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 1. Gate 2. Source 3. Drain 0-0.1 +0.10.68 -0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ =150℃)*1 Ta=25℃ Ta=70℃ Pulsed Drain Current *2 Power Dissipation *1 Ta=25℃ Ta=70℃ Thermal Resistance.Junction- to-Ambient *1 *3 Junction Temperature Storage Temperature Range Symbol VDS VGS ID IDM PD RthJA TJ... |