| Description | General Purpose Transistors D882M-G RoHS Device Features - Power Dissipation - High collector current. - High current gain. - Low collector-emitter saturation voltage. Diagram - 1. BASE - 2. COLLECTOR - 3. EMITTER 2 C 1 B E 3 Maximum Ratings (at TA=25°C unless otherwise noted) Parameter Symbol... |
| Features |
- Power Dissipation - High collector current. - High current gain. - Low collector-emitter saturation voltage.
Diagram
- 1. BASE - 2. COLLECTOR - 3. EMITTER
2
C
1
B
E
3
Maximum Ratings (at TA=25°C unless otherwise noted)
Parameter
Symbol Value Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current-continuous Collector power dissipation Junction temperature range
VCBO VCEO VEBO
IC PC TJ
40 V 30 V 6V 3A 1.25 W 150 °C
Storage temperature range
TSTG
-55 to +150 °C
TO-252-2L
0.264(6.70) 0.256(6.50) 0.215(5.46) 0.202(5.13)
0.409(10.40) 0.386( 9.80)
...
|
| Datasheet |
 D882M-G Datasheet - 177.42KB |
| Part Number | Description |
|---|---|
 JCET |
NPN Transistor JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors D882M TRANSISTOR (NPN) TO-252-2L FEATURES Power Dissipation MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 40 30 5 3 1.25 150 -55-150 Unit V V V A W ℃ ℃ 1. BASE 2. COLLECTOR 3 .EMITTER ELECTRICAL CHARACTERISTICS ( Ta=25℃ unless otherwise specified ) Parameter Symbol Test conditions Min Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base b... |
 SHENZHENPENGAI |
NPN Transistor SHENZHENPENGAI SEMICONDUCTOR CO.LTD D882M ： 、、。 ： 、、。 ： TO-126 TEL:0755-27656829 FAX:0755-23443106 NPN （TC=25℃） - - - （TC=25℃） - - - - - - - BVce0 BVcb0 BVeb0 Icm Pcm Tj Tstg ≥40 ≥30 ≥6 3 35 150 -55~150 V V V A W ℃ ℃ BVce0 BVcb0 BVeb0 Ice0 Icb0 Ieb0 Hfe Vcesat fT IC=1mA IB... |