MOSFET transistor

AD500-9 Silicon Sensor Avalanche Photodiode

Description AD500-9 TO52S1F2 Avalanche Photodiode for NIR with bandpass filter for 905 nm Special characteristics: quantum efficiency > 70 % at λ 890 - 915 nm high speed, low noise 500 µm diameter active area low slope multiplication curve Parameters: Active Area Dark Current 1) (M = 100) Total Capacitance...
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Datasheet PDF File AD500-9 Datasheet - 112.25KB

AD500-9   AD500-9  





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Part Number Description
AD500-9
manufacturer
First Sensor
APD
AD500-9 TO Order # 500031; 500306; 500156; 500590 Version 14-08-14 # 500306 # 500156 # 500590 Features • APD with 0.2 mm² active area • Slow multiplication curve • QE > 80% @ 750 nm-910 nm • Fast rise time, low noise • Optimum gain: 50-60 Description Circular active area APD chip with NIR enhanced sensitivity. Metal can type hermetic TO52 package with clear glass window. Four TO52 types available. Application • Laser range finder • High speed photometry • High speed optical communications • Medical equipment RoHS 2002/95/EC Absolute maximum ratings Symbol Parameter Min Max TSTG TOP Mmax Storage temp Operating temp Gain (IP0 = 1 nA) -55 125 -40 100 200 IPEAK Peak DC current 0....
AD500-9-400M-TO5
manufacturer
First Sensor
APD Hybrid
AD500-9-400M-TO5 US Order # 05-051-01, # 05-051-02 International Order # 50049001, # 50049002 2.2 Ø6.60 113° VIEWING Ø8.3 ANGLE Ø 0.46 5 PL PIN 5 CASE/ GND Ø9.2 PIN 1 Vout+ PIN 2 VCC 1.00 SQ 4.2 ±1 7.6 MIN 5 PL ACTIVE AREA: 0.196 mm2 (500 µm DIAMETER) PIN 4 Vout- Ø5.08 PIN CIRCLE PIN 3 +VBIAS BACKSIDE VIEW CHIP DIMENSIONS OMPLIANT RESPONSIVITY (A/W) RoH FEATURES • ∅ 0.500 mm active area • Low noise • High gain • Long term stability DESCRIPTION The AD500-9-400M-TO5 is an Avalanche Photodiode Amplifier Hybrid containing a 0.196 mm2 active area APD chip integrated with an internal transimpedance amplifier. Hermetically packaged in a TO-5 with a borosilicate glass window cap. A...


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