MOSFET transistor

DB24417 Panasonic Silicon epitaxial planar type

Description This product complies with the RoHS Directive (EU 2002/95/EC). DB24417 Silicon epitaxial planar type For rectification  Features  Low forward voltage VF  High forward current (Average) rating : IF(AV) = 5 A  Contributes to miniaturization of sets, reduction of component count.  Eco-friendly H...
Features  Low forward voltage VF  High forward current (Average) rating : IF(AV) = 5 A  Contributes to miniaturization of sets, reduction of component count.  Eco-friendly Halogen-free package
 Packaging Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
 Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Reverse voltage VR 40 Forward current (Average) *1 Non-repetitive peak forward surge current *2 IF(AV) IFSM 5.0 50 Junction temperature Tj 125 Storage temperature Tstg
  –55 to +125 Note) *1: Mounted on an alumina PC board (Board: 50 mm × 50 mm) *2: 50 Hz s...

Datasheet PDF File DB24417 Datasheet - 337.57KB

DB24417   DB24417  





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DB24404
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Diode
Tentative DB24404 Silicon epitaxial planar type For rectification Marking Symbol : A8 Package Code : TMiniP2-F2-B Absolute Maximum Ratings Ta = 25 °C Parameter Reverse voltage Maximum peak reverse voltage Forward current (Average) *1 Non-repetitive peak forward surge current Junction temperature Storage temperature DB24404 Total pages page Symbol VR VRM IF(AV) IFSM Tj Tstg Rating 40 40 3.0 60 125 -40 to +125 Unit V V A A °C °C Pin name 1. Cathode 2. Anode Note: 1. *1 50Hz sine wave 1 cycle (Non-repetitive peak current) Electrical Characteristics Ta = 25 °C±3 °C Parameter Forward voltage Reverse current Terminal capacitance Reverse recovery time *1 Symbol VF IR Ct trr Conditions IF ...


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