MOSFET transistor

DZ2S068C Panasonic Silicon epitaxial planar type

Description This product complies with the RoHS Directive (EU 2002/95/EC). DZ2S068C Silicon epitaxial planar type For ESD protection Bi-directional type  Features  High electrostatic discharge ESD  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)  Marking Symbol: GH  Packag...
Features  High electrostatic discharge ESD  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
 Marking Symbol: GH
 Packaging DZ2S068C0L Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
 Absolute Maximum Ratings Ta = 25°C Parameter Symbol Total power dissipation *1 PT Electrostatic discharge *2 ESD Rating 150 ±15 Unit mW kV Junction temperature Tj 150 °C Storage temperature Tstg
  –55 to +150 °C Note) *1: Mounted on glass epoxy print board. (45 mm × 45 mm × 1 mm) Solder in ( 0.8 mm × 0.6 mm) *2: Test method: IEC61000-4-2 (C = 150 pF, R ...

Datasheet PDF File DZ2S068C Datasheet - 658.19KB

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Similar Datasheet

Part Number Description
DZ2S068
manufacturer
Panasonic
Silicon epitaxial planar type
This product complies with the RoHS Directive (EU 2002/95/EC). DZ2S068 Silicon epitaxial planar type For constant voltage / waveform clipper and surge absorption circuit Low noise type DZ2J068 in SSMini2 package  Features  Excellent rising characteristics of zener current Iz  Eco-friendly Halogen-free package  Packaging Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)  Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Repetitive peak forward current Total power dissipation * IFRM 200 PT 150 Junction temperature Tj 150 Storage temperature Tstg –55 to +150 Note) *: PT = 150 mW achieved with a printed circuit board. Unit mA mW °C °C  Packag...


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