| Description | BUZ 102 SL SPP47N05L SIPMOS ® Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS 55 V ID 47 A RDS(on) 0.028 Ω Package Ordering Code BUZ 102 SL TO-220 AB Q6... |
| Features |
istance, junction - case Thermal resistance, junction - ambient IEC climatic category, DIN IEC 68-1
Tj Tstg RthJC RthJA
-55 ... + 175 -55 ... + 175
°C
≤ 1.25 ≤ 62
55 / 175 / 56
K/W
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit
Drain- source breakdown voltage
V GS = 0 V, ID = 0.25 mA, Tj = 25 °C
V (BR)DSS
V 55 -
Gate threshold voltage
V GS=V DS, ID = 90 µA
V GS(th)
1.2
IDSS
1.6
2 µA
Zero gate voltage drain current
V DS = 50 V, V GS = 0 V, Tj = -40 °C V DS = 50 V, V GS = 0 V, Tj = 25 °C V DS ...
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| Datasheet |
 BUZ102SL Datasheet - 120.78KB |
| Part Number | Description |
|---|---|
 Siemens Semiconductor Group |
Power Transistor BUZ 102 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Pin 1 G Type BUZ 102 Pin 2 D Pin 3 S VDS 50 V ID 42 A RDS(on) 0.023 Ω Package TO-220 AB Ordering Code C67078-S1351-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 42 Unit A ID IDpuls 168 TC = 111 °C Pulsed drain current TC = 25 °C Avalanche energy, single pulse EAS 180 dv/dt 6 mJ ID = 42 A, VDD = 25 V, RGS = 25 Ω L = 102 µH, Tj = 25 °C Reverse diode dv/dt kV/µs IS = 42 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C Gate source voltage Power dissipation VGS Ptot ± 20 200 V W TC =... |
Siemens Semiconductor Group |
Power Transistor BUZ 102AL SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/dt rated • Low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Pin 1 G Pin 2 D Pin 3 S Type BUZ 102AL VDS 50 V ID 42 A RDS(on) 0.028 Ω Package TO-220 AB Ordering Code C67078-S1356-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 42 Unit A ID IDpuls 168 TC = 97 °C Pulsed drain current TC = 25 °C Avalanche energy, single pulse EAS 180 dv/dt 6 mJ ID = 42 A, VDD = 25 V, RGS = 25 Ω L = 102 µH, Tj = 25 °C Reverse diode dv/dt kV/µs IS = 42 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C Gate source voltage Gate-source peak voltage,aper... |
 Infineon |
Power Transistor BUZ 102S SIPMOS Power Transistor Features • N channel • Enhancement mode • Avalanche rated Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current • dv/dt rated • 175 ˚C operating temperature VDS RDS(on) ID 55 0.018 52 V Ω A Type BUZ102S BUZ102S E3045A BUZ102S E3045 Package Ordering Code P-TO220-3-1 Q67040-S4011-A2 P-TO263-3-2 Q67040-S4011-A6 P-TO263-3-2 Q67040-S4011-A5 Packaging Tube Tape and Reel Tube Pin 1 Pin 2 Pin 3 GDS Maximum Ratings, at Tj = 25 ˚C unless unless specified Parameter Symbol Continuous drain current TC = 25 ˚C TC = 100 ˚C ID Pulsed drain current TC = 25 ˚C Avalanche energy, single pulse ID = 52 A, VDD = 25 V, RGS ... |
Siemens Semiconductor Group |
Power Transistor BUZ 102 S SPP52N05 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS 55 V ID 52 A RDS(on) 0.023 Ω Package Ordering Code BUZ 102 S TO-220 AB Q67040-S4011-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 25 °C TC = 100 °C ID A 52 37 Pulsed drain current TC = 25 °C IDpuls 208 E AS Avalanche energy, single pulse ID = 52 A, V DD = 25 V, RGS = 25 Ω L = 181 µH, Tj = 25 °C mJ 245 IAR E AR Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Reverse diode dv/dt IS = 52 A, VDS = 40 V, diF/dt = 200 A... |
Siemens Semiconductor Group |
Power Transistor Preliminary data BUZ 102SL-4 SIPMOS ® Power Transistor • Quad-channel • Enhancement mode • Logic level • Avalanche-rated • dv/dt rated Type BUZ 102SL-4 VDS 55 V ID 6.2 A RDS(on) 0.033 Ω Package P-DSO-28 Ordering Code C67078-S. . . .- . . Maximum Ratings Parameter Continuous drain current one channel active Symbol Values 6.2 Unit A ID IDpuls 24.8 TA = 25 °C Pulsed drain current one channel active TA = 25 °C Avalanche energy, single pulse EAS 245 dv/dt 6 mJ ID = 6.2 A, VDD = 25 V, RGS = 25 Ω L = 12.7 mH, Tj = 25 °C Reverse diode dv/dt kV/µs IS = 6.2 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C Gate source voltage Power dissipation ,one channel active VGS Ptot ± 14 2.4 V ... |