| Description | Super SIDELED® High-Current LED LS A672, LO A672, LY A672 LG A672, LP A672 VPL06880 Besondere Merkmale q Gehäusefarbe: weiß q als optischer Indikator einsetzbar q besonders geeignet bei hohem Umgebungslicht durch erhöhten Betriebsstrom (≤ 50 mA DC) q zur Hinterleuchtung, Lichtleiter- und Linsenei... |
| Features |
q color of package: white q for use as optical indicator q appropriate for high ambient light because of the higher
operating current (≤ 50 mA DC) q for backlighting, optical coupling into light pipes and lenses q suitable for all SMT assembly and reflow soldering methods q available taped on reel (12 mm tape) q load dump resistant acc. to DIN 40839
Semiconductor Group
1
1998-11-12
LS A672, LO A672, LY A672 LG A672, LP A672
Typ
Type
s LS A672-LP s LS A672-N s LS A672-P s LS A672-NR s LO A672-LP s LO A672-N s LO A672-P s LO A672-NR s LY A672-LN s LY A672-N s LY A672-P s LY A672-MQ
Emissio...
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| Datasheet |
 LPA672 Datasheet - 172.42KB |
| Part Number | Description |
|---|---|
 OSRAM |
SIDELED SIDELED® Lead (Pb) Free Product - RoHS Compliant LS A670, LO A670, LY A670, LG A670, LP A670 Nicht für Neuentwicklungen Not for new designs Besondere Merkmale • Gehäusetyp: weißes SMT-Gehäuse, farbloser klarer Verguss • Besonderheit des Bauteils: Abstrahlung parallel zur Platine, deshalb ideal zur Einkopplung in Lichtleiter • Wellenlänge: 628 nm (super-rot), 606 nm (orange), 587 nm (gelb), 570 nm (grün), 560 nm (pure green) • Abstrahlwinkel: Lambertscher Strahler (120°) • Technologie: GaAsP (super-rot, orange, gelb, grün), GaP (pure green) • optischer Wirkungsgrad: 1,5 lm/W (super-rot, orange, gelb), 2,5 lm/W (grün), 0,6 lm/W (pure green) • Gruppierungsparameter: Lichtstärke, Wellenlänge • ... |
OSRAM |
High-Current LED Super SIDELED® High-Current LED LG A672, LP A672 Abgekündigt nach PD_078_02 - werden durch LG A676 und LP A676 ersetzt werden Obsolete acc. to PD_078_02 - will be replaced by LG A676 and LP A676 Besondere Merkmale • Gehäusetyp: weißes SMT Gehäuse • Besonderheit des Bauteils: Abstrahlung parallel zur Platine, deshalb ideal zur Einkopplung in Lichtleiter; höherer zulässiger Betriebsstrom • Wellenlänge: 570 nm (grün), 560 nm (pure green) • Abstrahlwinkel: Lambertscher Strahler (120°) • Technologie: GaAsP (grün), GaP (pure green) • optischer Wirkungsgrad: 1,5 lm/W (grün), 0,6 lm/W (pure green) • Gruppierungsparameter: Lichtstärke • Verarbeitungsmethode: für alle SMT-Bestücktechniken geeignet •... |
 Filtronic Compound Semiconductors |
MEDIUM POWER PHEMT WITH SOURCE VIAS AND APPLICATIONS DIE SIZE: 15.4X14.2 mils (390x360 µm) DIE THICKNESS: 3.9 mils (100 µm) BONDING PADS: 3.0X3.0 mils (75x75 µm) The FPA6836V is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µm by 360 µm Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for high dynamic range. Typical applications include high dynamic range driver stages for commercial applications including wireless infrastructure systems, broad bandwidth amplifiers, and optical... |
Filtronic Compound Semiconductors |
MEDIUM POWER PHEMT WITH SOURCE VIAS AND APPLICATIONS DIE SIZE: 15.4X14.2 mils (390x360 µm) DIE THICKNESS: 3.9 mils (100 µm) BONDING PADS: 3.0X3.0 mils (75x75 µm) The FPA6836V is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µm by 360 µm Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for high dynamic range. Typical applications include high dynamic range driver stages for commercial applications including wireless infrastructure systems, broad bandwidth amplifiers, and optical... |