| Description | The CS150N95 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features ● VDS=150V; ID=104A@ VGS=10V; RDS(ON)<14.0mΩ @ VGS=10V ● Spe... |
| Features |
● VDS=150V; ID=104A@ VGS=10V; RDS(ON)<14.0mΩ @ VGS=10V ● Special Designed for E-Bike Controller Application ● Ultra Low On-Resistance ● High UIS and UIS 100% Test Application ● 96V E-Bike controller applications ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply CS150N95 To-220 Top View Schematic Diagram VDS = 150V ID= 104A RDS(ON)= 9.3mΩ Package Marking and Ordering Information Device Marking Device Device Package CS150N95 CS150N95 TO-220 Reel Size - Table 1. Absolute Maximum Ratings (TA=25℃) Symbol Parameter VDS Drain-Source Voltage (VGS=0V) VGS Gate-... |
| Datasheet |
 CS150N95 Datasheet - 576.96KB |
| Part Number | Description |
|---|---|
 Huajing |
Silicon N-Channel Power MOSFET CS150N03 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤3.5mΩ) l Low Gate Charge (Typical Data:75nC) l Low Reverse transfer capacitances(Typical:800pF) l 100% Single Pulse avalanche energy Test Applications： UPS,Inverter,Lighting. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2... |
Huajing |
Silicon N-Channel Power MOSFET CS150N03 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤3.5mΩ) l Low Gate Charge (Typical Data:75nC) l Low Reverse transfer capacitances(Typical:800pF) l 100% Single Pulse avalanche energy Test Applications： UPS,Inverter,Lighting. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2... |
Huajing |
Silicon N-Channel Power MOSFET CS150N03 D8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor VDSS ID（Silicon limited current） ID（Package limited current） PD(TC=25℃) RDS(ON)Typ 30 150 120 104 1.9 V A A W mΩ can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤2.5mΩ) l Low Gate Charge l Low Reverse transfer capacitances(Typical:482pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circ... |
 Huajing Microelectronics |
Silicon N-Channel Power MOSFET CS150N04 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤4.5mΩType4mΩ) l High Power and Current Handing Capability l Low Reverse transfer Capacitances(Typical:480pF) l 100% Single Pulse avalanche energy Test Applications： UPS,Inverter,Lighting. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS Dra... |