| Description | DS G TO-220FB-3L DS G TO-220FB-3M DS G TO-263-2L Applications • Switching application • Power Management for Inverter Systems. DS G TO-3PS-3L D DS G TO-3PS-3M G N-Channel MOSFET Ordering and Marking Information S P HY4008 YYÿ XXXJWW G PS HY4008 YYÿ XXXJWW G M HY4008 YYÿ XXXJWW G PM HY4008... |
| Features |
• 80V/200A RDS(ON) = 2.9 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Pin Description DS G TO-220FB-3L DS G TO-220FB-3M DS G TO-263-2L Applications • Switching application • Power Management for Inverter Systems. DS G TO-3PS-3L D DS G TO-3PS-3M G N-Channel MOSFET Ordering and Marking Information S P HY4008 YYÿ XXXJWW G PS HY4008 YYÿ XXXJWW G M HY4008 YYÿ XXXJWW G PM HY4008 YYÿ XXXJWW G B HY4008 YYÿ XXXJWW G Package Code P : TO-220FB-3L B: TO-263-2L PM: TO-3PS-3M M : TO-220FB-3M PS: TO-3PS-3L Date Cod... |
| Datasheet |
 HY4008M Datasheet - 4.61MB |
| Part Number | Description |
|---|---|
 HOOYI |
N-Channel MOSFET HY4004W/A Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink TC=25°C 40 ±20 175 -55 to 175 208 IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Avalanche Ratings TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 750** 208 138 268 125 0.56 40 EAS Avalanche Energy, Single Pulsed L=0.5mH Note * Repetitive rating ; pulse width limiited by junction tempe... |
HOOYI |
N-Channel MOSFET HY4004W/A Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink TC=25°C 40 ±20 175 -55 to 175 208 IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Avalanche Ratings TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 750** 208 138 268 125 0.56 40 EAS Avalanche Energy, Single Pulsed L=0.5mH Note * Repetitive rating ; pulse width limiited by junction tempe... |
HOOYI |
N-Channel MOSFET S D G TO-247-3L S D G TO-3P-3L D G N-Channel MOSFET Ordering and Marking Information S WA HY4008 HY4008 YYÿ XXXJWW G YYÿ XXXJWW G Package Code W : TO-247-3L Date Code YYXXX WW A : TO-3P-3L Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. HOOYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous m... |
HOOYI |
N-Channel MOSFET S D G TO-247-3L S D G TO-3P-3L D G N-Channel MOSFET Ordering and Marking Information S WA HY4008 HY4008 YYÿ XXXJWW G YYÿ XXXJWW G Package Code W : TO-247-3L Date Code YYXXX WW A : TO-3P-3L Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. HOOYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous m... |
HOOYI |
N-Channel MOSFET DS G TO-220FB-3L DS G TO-220FB-3M DS G TO-263-2L Applications • Switching application • Power Management for Inverter Systems. DS G TO-3PS-3L D DS G TO-3PS-3M G N-Channel MOSFET Ordering and Marking Information S P HY4008 YYÿ XXXJWW G PS HY4008 YYÿ XXXJWW G M HY4008 YYÿ XXXJWW G PM HY4008 YYÿ XXXJWW G B HY4008 YYÿ XXXJWW G Package Code P : TO-220FB-3L B: TO-263-2L PM: TO-3PS-3M M : TO-220FB-3M PS: TO-3PS-3L Date Code YYXXX WW Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free... |
HOOYI |
N-Channel MOSFET DS G TO-220FB-3L DS G TO-220FB-3M DS G TO-263-2L Applications • Switching application • Power Management for Inverter Systems. DS G TO-3PS-3L D DS G TO-3PS-3M G N-Channel MOSFET Ordering and Marking Information S P HY4008 YYÿ XXXJWW G PS HY4008 YYÿ XXXJWW G M HY4008 YYÿ XXXJWW G PM HY4008 YYÿ XXXJWW G B HY4008 YYÿ XXXJWW G Package Code P : TO-220FB-3L B: TO-263-2L PM: TO-3PS-3M M : TO-220FB-3M PS: TO-3PS-3L Date Code YYXXX WW Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free... |
HOOYI |
N-Channel MOSFET DS G TO-220FB-3L DS G TO-220FB-3M DS G TO-263-2L Applications • Switching application • Power Management for Inverter Systems. DS G TO-3PS-3L D DS G TO-3PS-3M G N-Channel MOSFET Ordering and Marking Information S P HY4008 YYÿ XXXJWW G PS HY4008 YYÿ XXXJWW G M HY4008 YYÿ XXXJWW G PM HY4008 YYÿ XXXJWW G B HY4008 YYÿ XXXJWW G Package Code P : TO-220FB-3L B: TO-263-2L PM: TO-3PS-3M M : TO-220FB-3M PS: TO-3PS-3L Date Code YYXXX WW Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free... |
HOOYI |
N-Channel MOSFET DS G TO-220FB-3L DS G TO-220FB-3M DS G TO-263-2L Applications • Switching application • Power Management for Inverter Systems. DS G TO-3PS-3L D DS G TO-3PS-3M G N-Channel MOSFET Ordering and Marking Information S P HY4008 YYÿ XXXJWW G PS HY4008 YYÿ XXXJWW G M HY4008 YYÿ XXXJWW G PM HY4008 YYÿ XXXJWW G B HY4008 YYÿ XXXJWW G Package Code P : TO-220FB-3L B: TO-263-2L PM: TO-3PS-3M M : TO-220FB-3M PS: TO-3PS-3L Date Code YYXXX WW Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free... |
HOOYI |
N-Channel MOSFET S D G TO-247-3L S D G TO-3P-3L D G N-Channel MOSFET Ordering and Marking Information S WA HY4008 HY4008 YYÿ XXXJWW G YYÿ XXXJWW G Package Code W : TO-247-3L Date Code YYXXX WW A : TO-3P-3L Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. HOOYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous m... |