| Description | C301/C321/C331/C511/C531/ES5431 User’s Guide PREFACE Every effort has been made to ensure that the information in this document is complete, accurate, and up-to-date. The manufacturer assumes no responsibility for the results of errors beyond its control. The manufacturer also cannot guarantee that... |
| Features |
ademark of Oki Electric Industry Co., Ltd.
Energy Star is a trademark of the United States Environmental Protection Agency. Microsoft, MS-DOS and Windows are registered trademarks of Microsoft Corporation. Apple, Macintosh, Mac and Mac OS are registered trademarks of Apple Inc. Other product names and brand names are registered trademarks or trademarks of their proprietors.
As an Energy Star Program Participant, the manufacturer has determined that this product meets the Energy Star guidelines for energy efficiency.
This product complies with the requirements of the Council Directives 2004/ ...
|
| Datasheet |
 C511 Datasheet - 5.90MB |
| Part Number | Description |
|---|---|
 International Resistive |
Thick Film Conformal Coated ... |
 Mitsumi Electronics |
Power Inductors MITSUMI Power Inductors C3-K,C4-K,C5-K,C6-K,C8-K,C10-K,C12-K,C13-K Series Coils, Filters OUTLINE High efficiency (low DCR) choke coil for batterydriven portable electronic equipment power supplies (DC-DC converter, switching power supply) and other electronic equipment. C3-K C4-K C5-K C6-K C8-K C10-K C12-K C13-K FEATURES 1. Less than one-half the conventional number of DC resistors. www.DataSheet4U.com 2. Low height, able to handle high power. 3. The "closed magnetic circuit" structure reduces electromagnetic interference. USES Use in DSC, DVD, MD/MP3/DVD Player, CDMA, HANDY PHONE, PDA, NOTE-PC, LCD, PDP, CAR NAVIGATION, and other electronic equipments. MITSUMI Power Inductors SP... |
 Toshiba Semiconductor |
2SC5000 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5000 Power Amplifier Applications 2SC5000 Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 5 A) Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 7 V Collector current IC 10 A Base current IB 1 A Collector power dissipation PC 25 W Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high JEDEC ― temperature/current/voltage and the significant change in JEITA ― temperature, etc.) ma... |
 International |
Low Skew Muliple Frequency PCI Clock Generator with EMI Reducing SSCG Pin Number 2 Pin Name XIN PWR VDDA I/O I Description This pin is the connection point for the devices Loop reference frequency. This may be either a CMOS 3.3 volt reference clock or the output of an external crystal. A nominal 14.31818 MHz frequency must be supplied to obtain the frequencies listed on this data sheet This pin the devices output drive that is to be used when an external crystal is used. In this configuration the device provides the analog gain function of a crystal oscillator. When the device is being supplied with an external reference frequency, this pin is left disconnected. This pin is the power supply source for the internal PLL circuitry and core control logic. It shoul... |
International |
Low Skew Muliple Frequency PCI Clock Generator with EMI Reducing SSCG Pin Number 2 Pin Name XIN PWR VDDA I/O I Description This pin is the connection point for the devices Loop reference frequency. This may be either a CMOS 3.3 volt reference clock or the output of an external crystal. A nominal 14.31818 MHz frequency must be supplied to obtain the frequencies listed on this data sheet This pin the devices output drive that is to be used when an external crystal is used. In this configuration the device provides the analog gain function of a crystal oscillator. When the device is being supplied with an external reference frequency, this pin is left disconnected. This pin is the power supply source for the internal PLL circuitry and core control logic. It shoul... |
 Sanken electric |
2SC5002 2SC5002 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC5002 1500 800 6 7(Pulse14) 3.5 80(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C sElectrical Characteristics Symbol ICBO1 ICBO2 IEBO V(BR)CEO hFE1 hFE2 VCE(sat) VBE(sat) fT COB Conditions VCB=1200V VCB=1500V VEB=6V IC=10mA VCE=5V, IC=1A VCE=5V, IC=5A IC=5A, IB=1.2A IC=5A, IB=1.2A VCE=12V, IE=–0.5A VCB=10V, f=1MHz sTypical Switching Characteristics (Common Emitter) VCC RL IC VBB1 VBB2 (V) (Ω) (A) (V) (V) 200 50 4 10 –5 IB1 (A) 0.8 IB2 (A) –1.6 Application : Display Horizontal Deflection Output, Switching Re... |
 SavantIC |
2SC5002 ·With TO-3PML package ·High voltage switching APPLICATIONS ·Display horizontal deflection output; switching regulator general purpose PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Product Specification 2SC5002 Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VCBO VCEO VEBO IC ICM IB Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current PC Collector power dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 VALUE 1500 800 6 7 14 3.5 80 150 -55~150 UNIT V V V A A A W www.datSasaheveat4nu.tcIoCm ... |
 Cypress |
Low Skew Multiple Frequency PCI Clock Generator Pin Number 2 Pin Name XIN 3 XOUT 1 VDDA 5 12, 16, 20, 24, 28 6 7 27 26 23 22 19 18 15 14 11 10 4, 8, 9, 13, 17, 21, 25 1 28 24 20 16 12 OE VDD SDATA SCLK REFCLK0/S0 CLK1/S1 CLK2/S2 CLK3/S3 CLK4/S4 CLK5/S5 CLK6/S6 CLK7/S7 CLK8/S8 CLK9/S9 VSS VDD VDD1 VDD2 VDD3 VDD4 VDD5 PWR VDDA VDDA - VDDA VDDA VDD1 VDD1 VDD2 VDD2 VDD3 VDD3 VDD4 VDD4 VDD5 VDD5 - - I/O I O PWR I PWR I/O O O Description This pin is the connection point for the devices Loop reference frequency. This may be either a CMOS 3.3 volt reference clock or the output of an external crystal. A nominal 14.31818 MHz frequency must be supplied to obtain the frequencies listed on this data sheet This pin the devices output drive that... |
 Siemens |
8-Bit Single-Chip Microcontroller C501 8-Bit Single-Chip Microcontroller User’s Manual 04.97 htStep:/m/icwowndw.usicteomr/ens.de/ Edition 04.97 This edition was realized using the software system FrameMaker®. Published by Siemens AG, Bereich Halbleiter, MarketingKommunikation, Balanstraße 73, 81541 München © Siemens AG 1997. All Rights Reserved. Attention please! As far as patents or other rights of third parties are concerned, liability is only assumed for components, not for applications, processes and circuits implemented within components or assemblies. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. For ques... |
 NEC |
2SC5012 DATA SHEET SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Small Package • High Gain Bandwidth Product (fT = 9 GHz TYP.) • Low Noise, High Gain • Low Voltage Operation ORDERING INFORMATION PART NUMBER 2SC5012-T1 2SC5012-T2 QUANTITY 3 Kpcs/Reel. 3 Kpcs/Reel. PACKING STYLE Embossed tape 8 mm wide. Pin 3 (Base), Pin 4 (Emitter) face to perforation side of the tape. Embossed tape 8 mm wide. Pin1 (Collector), Pin2 (Emitter) face to perforation side of the tape. * Please contact with responsible NEC person, if you require evaluation sample. Unit sample quantity shall be 50 pcs. (Part No.: 2SC5012) ABSOLUTE MAX... |
 Panasonic |
Silicon NPN Transistor Transistors 2SC5019 Silicon NPN epitaxial planar type For UHF band low-noise amplification Unit: mm 4.5±0.1 ■ Features 1.6±0.2 1.5±0.1 • Low noise figure NF 2.5±0.1 3˚ 4.0–+00..2205 • High maximum unilateral power gain GUM • High transition frequency fT • Mini Power type package, allowing downsizing of the equip- ment and automatic insertion through the tape packing and the magazine packing 1 0.4±0.08 1.5±0.1 23 0.5±0.08 3˚ 1.0–+00..21 0.4±0.04 / ■ Absolute Maximum Ratings Ta = 25°C e e) Parameter Symbol Rating Unit 2.6±0.1 0.4 max. c e. d typ Collector-base voltage (Emitter open) VCBO 15 V n d stag tinue Collector-emitter voltage (Base open) VCEO 10 V a e cle co... |
Siemens |
8-Bit CMOS Microcontroller Microcomputer Components 8-Bit CMOS Microcontroller C502 Data Sheet 08.94 htStep:/m/icwowndw.usicteomr/ens.de/ 8-Bit CMOS Microcontroller C502 Preliminary q Fully compatible to standard 8051 microcontroller q Versions for 12 / 20 MHz operating frequency q 16 K × 8 ROM (SAB-C502-2R only) q 256 × 8 RAM q 256 × 8 XRAM (additional on-chip RAM) q Eight datapointers for indirect addressing of program and external data memory (including XRAM) q Four 8-bit ports q Three 16 -bit Timers / Counters (Timer 2 with Up/Down Counter feature) q USART with programmable 10-bit Baudrate-Generator q Six interrupt sources, two priority levels q Programmable 15-bit Watchdog Timer q Oscillator Watc... |
 Moxa |
PCI Dual Port Sync Board Manual C502C502-PCI DualDual-Port Sync Board Moxa Technologies Co., Ltd. Tel: +866-2-8919-1230 Fax: +886-2-8919-1231 www.moxa.com [email protected] Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com C502 DualDual-Port Sync Board User’s User’s Manual ! " #$ % ... |
 Won-Top Electronics |
50A AVALANCHE AUTOMOTIVE CELL DIODE ® WON-TOP ELECTRONICS Features Diffused Junction Low Leakage Low Cost High Surge Current Capability Die Size 220 mil HEX C5020, C5024, C5036 50A AVALANCHE AUTOMOTIVE CELL DIODE Pb D Anode + C E Mechanical Data B C50 Case: Cell Diode Passivated with Silicon Rubber Terminal: Copper Disc with Ag Plated Polarity: Indicated by Large Disc On Cathode Dim Min Max A — 7.55 B — 6.55 Side, Add “R” Suffix to Indicate Reverse Polarity, C 0.75 — i.e. C5020R Mounting Position: Any Lead Free: For RoHS / Lead Free Version, D 1.0 — A E — 2.2 All Dimensions in mm Add “-LF” Suffix to Part Number, See Page 2 Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise ... |
NEC |
UPC5021 www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com ... |
 Hitachi Semiconductor |
2SC5022 2SC5022 Silicon NPN Triple Diffused Application High voltage amplifier Features • High breakdown voltage V (BR)CEO = 1500 V Min Outline TO-220FM www.DataSheet.co.kr 12 3 1. Base 2. Collector 3. Emitter Datasheet pdf - http://www.DataSheet4U.net/ 2SC5022 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC I C (peak) PC Tj Tstg Ratings 1500 1500 6 20 40 2 150 –55 to +150 Unit V V V mA mA W °C °C Electrical Characteristics (Ta = 25°C) Item Collector cutoff current Collector cutoff curr... |
 Hitachi |
2SC5023 www.DataSheet4U.com 2SC5023 Silicon NPN Epitaxial Application High frequency amplifier Features • Excellent high frequency characteristics fT = 1000 MHz typ • High breakdown voltage and low output capacitance VCEO = 100 V, Cob = 4.5 pF typ • Suitable for wide band video amplifier TO–126FM 123 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit ——————————————————————————————————————————— Collector to base voltage VCBO 100 V ——————————————————————————————————————————— Collector to emitter voltage VCEO 100 V ——————————————————————————————————————————— Emitter to base voltage VEBO 5 V ——————————————————————————————————————————— C... |