| Description | c This device is an N-channel Zener-protected u Power MOSFET developed using d STMicroelectronics’ SuperMESH™ technology, ro achieved through optimization of ST’s well P established strip-based PowerMESH™ layout. In te addition to a significant reduction in on- resistance, this device is designed to... |
| Features |
Type
VDSS
RDS(on) max
ID
PW
STB20NK50Z 500 V < 0.27 Ω 17 A 190 W
ct(s) ■ Extremely high dv/dt capability du ■ 100% avalanche tested ro ■ Gate charge minimized P ■ Very low intrinsic capacitances te ■ Very good manufacturing repeatability sole Application Ob ■ Switching applications t(s) - Description c This device is an N-channel Zener-protected u Power MOSFET developed using d STMicroelectronics’ SuperMESH™ technology, ro achieved through optimization of ST’s well P established strip-based PowerMESH™ layout. In te addition to a significant reduction in on- resistance, this device is de... |
| Datasheet |
 B20NK50Z Datasheet - 431.82KB |
| Part Number | Description |
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