Description | VCES 600 V Using HUAJING's proprietary trench design and advanced Field Stop (FS) IC 40 A technology, offering superior conduction and switching performances. Ptot (TC=25℃) 280 W VCE(sat) 1.9 V Features: l FS Trench Technology, Positive temperature coefficient l Low saturation voltage:... |
Features |
l FS Trench Technology, Positive temperature coefficient l Low saturation voltage: VCE(sat), typ= 1.9V
@ IC = 40A and TC = 25°C l RoHS Compliant
Applications:
l Welding l Solar Inverter l UPS
Absolute Maximum Ratings(Tj= 25℃ unless otherwise specified):
Symbol
Parameter
Rating
VCES VGES
IC ICMa1 IF
Collector-Emitter Voltage Gate- Emitter Voltage Collector Current@TC=25℃ Collector Current @TC = 100 °C Pulsed Collector Current@TC=25℃ Diode Continuous Forward Current @TC = 100 °C
600 ±20
80 40 120 20
IFM
Diode Maximum Forward Current
Power Dissipation @ TC = 25°C
PD
Power Dissipatio...
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Datasheet | BT40T60ANFU Datasheet - 1.40MB |
Part Number | Description |
---|---|
Huajing Microelectronics |
Insulated gate bipolar transistor ... |
Huajing Microelectronics |
Insulated gate bipolar transistor BT40T60 ANFD ○R BT40T60 ANFD FS IGBT , ,。 RoHS 。 ● FS ,; ● :VCE(sat),TYP=1.8V @IC=40A,VGE=15V ; VCES IC Ptot (TC=25℃) VCE(sat) 600 40 280 1.8 :TO-3P(N) V A W V ● ● ● ● (,TC= 25℃) VCES - VGES - IC @TC=25℃ @TC=100℃ ICMa1 @TC=25℃ IF @TC=100℃ IFM @TC=25℃ PD @TC=100℃ @TA=25℃ TJ Tstg TL ... |