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Description
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• Trench Power MOSFET technology • Combined of low RDS(ON) and wide safe operatiing area
(SOA) • Higher in-rush current enabled for faster start-up and
shorter down time • RoHS and Halogen-Free Compliant
Applications
• Telecom Hot-Swap • Load switch • BMS • Motor
Top View
D
TO-263 D2PAK
Bottom V...
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Features
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25°C
di/dt
TC=25°C Power Dissipation B TC=100°C
PD
TA=25°C Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum 150 ±20 120 120 480 30 25 70 735
500
375 185 10 7 -55 to 175
Units V V
A
A A mJ A/us
W
W °C
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s Steady-State Steady-State
Symbol RqJA RqJC
Typ 12 50 0.26
Max 15 60 0.40
Units °C/W °C/W °C/W
Rev.1.0: June 2020
www.aosmd.com
Page 1 of 6
AOB66518L
Electrical Characteristics (TJ=25°C unless otherwise noted)
S...
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Datasheet
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 AOB66518L Datasheet - 653.85KB |
