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Description
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• Proprietary αMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI
performance • Enhanced body diode for robustness and fast reverse
recovery
Applications
• SMPS with PFC,Flyback and LLC topologies • Micro inverter with DC/AC inverter topology
Product Summary
VDS @ Tj,ma...
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Features
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ent
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C Single pulsed avalanche energy G
MOSFET dv/dt ruggedness Peak diode recovery dv/dt
VGS
ID
IDM IAR EAR EAS dv/dt
±30
24
24*
15
15*
96
6
18
172 100 20
TC=25°C Power Dissipation B Derate above 25°C
PD
250
34.7
2.0
0.3
Junction and Storage Temperature Range
Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds
TJ, TSTG TL
-55 to 150 300
Units V V V
A
A mJ mJ V/ns W W/°C °C
°C
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A
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Datasheet
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 AOB160A60L Datasheet - 490.31KB |
