Description
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• Trench Power MOSFET - AlphaSGTTM technology • Extremely Low RDS(ON) • Optimized switching performance • 175°C operating temperature • RoHS and Halogen-Free Compliant
Applications
• Telecom DC-DC • Industrial power • Load switch
Top View TO-247
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS...
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Features
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ge
TJ, TSTG
Maximum 100 ±20 120 120 480 56 48 90 405 500 250 18 13
-55 to 175
Units V V
A
A A mJ W
W °C
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s Steady-State Steady-State
Symbol RqJA RqJC
Typ 5 30
0.22
Max 8 40
0.30
Units °C/W °C/W °C/W
Rev.1.1: June 2020
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AOK66914
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250mA, VGS=0V
100
IDSS
Zero Gate Voltage Drain C...
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Datasheet
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AOK66914 Datasheet - 579.06KB |