|
Description
|
• Trench Power AlphaSGTTM technology • Low RDS(ON) • Low Gate Charge • Low Eoss
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=6V)
80V 100A < 2.6mΩ < 3.5mΩ
Applications
• Secondary Synchronous Rectification MOSFET for Server and Telecom
100% UIS Tested 100% Rg Tested
Ma...
|
|
Features
|
TSTG
Maximum 80 ±20 100 100 372 40 33 73 266 258 129 8.8 6.1
-55 to 175
Units V V
A
A A mJ W
W °C
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s Steady-State Steady-State
Symbol RqJA RqJC
Typ 14 40 0.43
Max 17 50 0.58
Units °C/W °C/W °C/W
Rev.1.0: October 2020
www.aosmd.com
Page 1 of 6
AONS62814T
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250mA, VGS=0V
80
IDSS
Zero Gate Voltage Drain Cu...
|
|
Datasheet
|
 AONS62814T Datasheet - 570.21KB |
