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Description
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• Trench Power MOSFET - AlphaSGTTM technology • Low RDS(ON) • Excellent Gate Charge x RDS(ON) Product(FOM) • RoHS and Halogen-Free Compliant
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=8V)
60V 58A < 8.5mΩ < 11mΩ
Applications
• Synchronous Rectification in SMPS • ATX a...
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Features
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on and Storage Temperature Range
TJ, TSTG
Maximum 60 ±20 58 37 125 20 16 20 60 52 21 6.2 4.0
-55 to 150
Units V V
A
A A mJ W
W °C
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
t ≤ 10s Steady-State
RqJA
15 40
Maximum Junction-to-Case
Steady-State RqJC
1.9
Max 20 50 2.4
Units °C/W °C/W °C/W
Rev.1.1: January 2024
www.aosmd.com
Page 1 of 6
AOD66620
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250μA, VGS=0V
...
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Datasheet
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 AOD66620 Datasheet - 356.21KB |
