| Description | • Trench Power MOSFET technology • Low RDS(ON) and Gate Charge • Enhanced Robustness • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=8V) 150V 100A < 9.8mΩ < 11.5mΩ Applications • High Frequency Switching and Synchronous Rectification 100... |
| Features |
r Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum 150 ±20 100 64 400 16 13 40 240 30 500 215 86 6.2 4
-55 to 150
Units V V
A
A A mJ V/ns A/us W
W °C
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s Steady-State Steady-State
Symbol RqJA RqJC
Typ 15 40 0.43
Max 20 50 0.58
Units °C/W °C/W °C/W
Rev.2.0: January 2021
www.aosmd.com
Page 1 of 6
AONS66521
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
STATIC PARAMETERS
BVDS...
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| Datasheet |
 AONS66521 Datasheet - 602.56KB |
| Part Number | Description |
|---|---|
 Alpha & Omega Semiconductors |
150V N-Channel MOSFET • Trench Power MOSFET - AlphaSGTTM technology • Low RDS(ON) • Low Gate Charge • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Applications • Adaptors SR MOSFET 100% UIS Tested 100% Rg Tested 150V 100A < 9.5mΩ < 12mΩ Top View DFN5x6 Bottom View Top View PIN1 S1 S2 S3 G4 8D 7D 6D 5D PIN1 Orderable Part Number AONS66520 Package Type DFN 5X6 Form Tape & Reel D G S Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Curre... |