| Description | TetraFET D2002UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA C 2 1 A 3 F (2 pls) H J N (typ) B D (2 pls) MI PIN 1 PIN 3 SOURCE GATE E KG DP PIN 2 DRAIN DIM mm A 16.51 B 6.35 C 45° D 3.30 E 18.92 F 1.52 G 2.16 H 14.22 I 1.52 J 6.35 K 0.13 M 5.08 N 1.27 x... |
| Features |
• SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 13 dB MINIMUM APPLICATIONS • VHF/UHF COMMUNICATIONS from DC to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD Power Dissipation 29W BVDSS Drain – Source Breakdown Voltage 65V BVGSS Gate – Source Breakdown Voltage ±20V ID(sat) Drain Current 2A Tstg Storage Temperature –65 to 150°C Tj Maximum Operating Junction Temperature 200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimension... |
| Datasheet |
 D2002UK Datasheet - 90.43KB |
| Part Number | Description |
|---|---|
 Shaoxing Silicore Technology |
Stereo Headphone Amplifier wThe D2002 is developed for play-back stereo wwheadphone equipment 3V use). Silicore 3V USE D2002 Outline Drawing It is built in dual auto-reverse preamplifier, mdual OCL power amplifier, and a ripple filter. .coFEATURE Power amplifier stage Uz OCL (Output Condenser-Less). t4z Low noise : Vno=22µVrms (Typ.) z Excellent ripple rejection ratio :RR=62dB e(Typ.) ez Voltage gain : Gv=27dB (Typ.) hz Built-in a power amplifier mute. Sz Built-in input capacitor for reducing buzz noise. taPreamplifier stage z Auto-reverse with F/R control switch. az Input coupling condenser-less .Dz Low noise : Vni=1.3µVrms (Typ.) z Built-in a preamplifier mute. wz Built-in input capacitor for reducing buzz noise. ... |