| Description | TetraFET D2007UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 4 M 2 D 3 E F GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 400MHz SINGLE ENDED G HK PIN 1 PIN 3 SOURCE SOURCE IJ DA PIN 2 DRAIN PIN 4 GATE DIM mm A 24.76 B 18.42 C 45° D 6.35 E 3.17... |
| Features |
• SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 13 dB MINIMUM APPLICATIONS • VHF/UHF COMMUNICATIONS from DC to 500MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD Power Dissipation 29W BVDSS Drain – Source Breakdown Voltage 65V BVGSS Gate – Source Breakdown Voltage ±20V ID(sat) Drain Current 2A Tstg Storage Temperature –65 to 150°C Tj Maximum Operating Junction Temperature 200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensio... |
| Datasheet |
 D2007UK Datasheet - 26.24KB |
| Part Number | Description |
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