| Description | TetraFET D2009UK MECHANICAL DATA AD B H C 23 G 1 E 54 F ROHS COMPLIANT METAL GATE RF SILICON FET GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 1GHz PUSH–PULL I PIN 1 PIN 3 PIN 5 NM O DQ SOURCE (COMMON) PIN 2 DRAIN 2 PIN 4 GATE 1 JK DRAIN 1 GATE 2 DIM mm A 16.38 ... |
| Features |
• SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 10 dB MINIMUM APPLICATIONS • VHF/UHF COMMUNICATIONS from 50 MHz to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD Power Dissipation 58W BVDSS Drain – Source Breakdown Voltage * 65V BVGSS Gate – Source Breakdown Voltage * ±20V ID(sat) Drain Current * 2A Tstg Storage Temperature –65 to 150°C Tj Maximum Operating Junction Temperature 200°C * Per Side Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-ma... |
| Datasheet |
 D2009UK Datasheet - 25.53KB |
| Part Number | Description |
|---|---|
 ROHM |
NPN Transistor ... |