MOSFET transistor

NSi6602-Q1 NOVOSENSE High Reliability Isolated Dual-Channel Gate Driver

Description ... 14 6.1. INSULATION CHARACTERISTICS . 1...
Features
 Isolated dual channel driver
 Input side supply voltage: 2.7V to 5.5V
 Driver side supply voltage: up to 25V with UVLO
 4A peak source and 6A peak sink output
 High CMTI: ±150kV/us typical
 25ns typical propagation delay
 5ns maximum delay matching
 6ns maximum pulse width distortion
 Programmable deadtime
 Accepts minimum input pulse width 20ns
 Operation temperature: -40℃~125℃
 AEC-Q100 (Grade 1) qualified for auto-motive application Safety Regulatory Approvals
 UL recognition: ◼ SOP16/SOP14(300mil): 5700Vrms for 1 minute per UL1577 ◼ SOP16(150mil): 3000Vrms for 1 minute per U...

Datasheet PDF File NSi6602-Q1 Datasheet - 1.34MB

NSi6602-Q1   NSi6602-Q1  





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