| Description | TetraFET D2006UK METAL GATE RF SILICON FET MECHANICAL DATA B (2 pls) E A C 2 3 1 5 4 G (4 pls) F O K D PIN 1 PIN 3 PIN 5 H J I DK SOURCE (COMMON) PIN 2 DRAIN 2 PIN 4 GATE 1 MN DRAIN 1 GATE 2 DIM mm A 6.45 B 1.65R C 45° D 16.51 E 6.47 F 18.41 G 1.52 H 4.82 I 24.... |
| Features |
• SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 13 dB MINIMUM APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from DC to 2 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD Power Dissipation 70W BVDSS Drain – Source Breakdown Voltage * 65V BVGSS Gate – Source Breakdown Voltage * ±20V ID(sat) Drain Current * 3A Tstg Storage Temperature –65 to 150°C Tj Maximum Operating Junction Temperature 200°C * Per Side Semelab Plc reserves the right to change test conditions, parameter li... |
| Datasheet |
 D2006UK Datasheet - 165.97KB |
| Part Number | Description |
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