Description | M93/M93C TRIPLE-BALANCED MIXER · LO 2 TO 18 GHz RF 2 TO 18 GHz · IF 0.03 TO 4 GHz · LO DRIVE +10 dBm (nominal) · WIDE BANDWIDTH Specifications (Rev. Date: 10/01)* Characteristics SSB Conversion Loss & SSB Noise Figure (max.) fR = 2 to 10 GHz, fL = 2 to 14 GHz, fI = 0.03 to 4 GHz fR = 10 to 18 GHz, ... |
Features |
Operating Temperature Storage Temperature Peak Input Power Peak Input Current
Outline Drawing(s)
-54°C to 100°C -65°C to 100°C 26 dBm max. @ +25°, 23°C mA DC
Package MPAC SMA Figure DB DA Model M93 M93C
Specifications subject to change without notice. • North America: 1-800-366-2266 Visit www.macom.com for complete contact and product information. M93/M93C Typical Performance at 25°C Specifications subject to change without notice. M/A-COM Field Sales Office: 1-800-366-2266 • website: www.macom.com ... |
Datasheet | M93 Datasheet - 138.53KB |
Part Number | Description |
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Comchip Technology |
High Current Bridge Rectifier High Current Bridge Rectifier MB Series Reverse Voltage: 50 - 1000 Volts Forward Current: 10/15/25/35/50 Amp Features Surge overload 200 - 400 Amp peak Low forward voltage dro Mounting position: Any Electrically isolated base - 1800 Volts Solderable 0.25” FASTON terminals Materials used carries U/L recognition Terminals/Metal COMCHIP www.comchiptech.com Lead/Metal Mechanical Data Case:Metal Case with Electrically Isolated Epoxy Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Mounting: Through Hole for #10 Screw Weight: 30 grams (approx.) - “W” Suffix Designates Wire Leads - No Suffix Designates Faston Terminals MB MB-W TERMI NALS LEAD Dim Min Max Min Max A 28.40 ... |
Comchip Technology |
High Current Bridge Rectifier High Current Bridge Rectifier MB Series Reverse Voltage: 50 - 1000 Volts Forward Current: 10/15/25/35/50 Amp Features Surge overload 200 - 400 Amp peak Low forward voltage dro Mounting position: Any Electrically isolated base - 1800 Volts Solderable 0.25” FASTON terminals Materials used carries U/L recognition Terminals/Metal COMCHIP www.comchiptech.com Lead/Metal Mechanical Data Case:Metal Case with Electrically Isolated Epoxy Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Mounting: Through Hole for #10 Screw Weight: 30 grams (approx.) - “W” Suffix Designates Wire Leads - No Suffix Designates Faston Terminals MB MB-W TERMI NALS LEAD Dim Min Max Min Max A 28.40 ... |
ABOV |
LIGHT-TO-DIGITAL CONVERTER REVISION 0.2 (August 6, 2012) - Add Optical characteristics REVISION 1.0 (September 24, 2012) - Change I2C slave address - Change default values of registers REVISION 1.1 (October 11, 2012) - Add characteristics of CH1 PD REVISION 1.2 (October 18, 2012) - Add Pinout & Package Dimension REVISION 1.3 (November 06, 2012) - Fix ODFN Package Dimension - Correct device name for MC8121FN REVISION 1.4 (January 15, 2013) - Remove MC8111 related contents REVISION 1.5 (January 22, 2013) - Fix ID register description REVISION 1.6 (March 08, 2013) - Fix electrical characteristics REVISION 1.61 (May 24, 2013) - Correct unit notation 2 May 2013 REV1.61 MC8121 REVISION 1.61 Published by Design Team 2013 ... |
Comchip Technology |
High Current Bridge Rectifier High Current Bridge Rectifier MB Series Reverse Voltage: 50 - 1000 Volts Forward Current: 10/15/25/35/50 Amp Features Surge overload 200 - 400 Amp peak Low forward voltage dro Mounting position: Any Electrically isolated base - 1800 Volts Solderable 0.25” FASTON terminals Materials used carries U/L recognition Terminals/Metal COMCHIP www.comchiptech.com Lead/Metal Mechanical Data Case:Metal Case with Electrically Isolated Epoxy Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Mounting: Through Hole for #10 Screw Weight: 30 grams (approx.) - “W” Suffix Designates Wire Leads - No Suffix Designates Faston Terminals MB MB-W TERMI NALS LEAD Dim Min Max Min Max A 28.40 ... |
STMicroelectronics |
EEPROM 1 Description The M93C46 (1 Kbit), M93C56 (2 Kbit), M93C66 (4 Kbit), M93C76 (8 Kbit) and M93C86 (16 Kbit) are electrically erasable programmable memory (EEPROM) devices accessed through the MICROWIRE™ bus protocol. The memory array can be configured either in bytes (x8b) or in words (x16b). The M93Cx6-W devices operate within a voltage supply range from 2.5 V to 5.5 V and the M93Cx6-R devices operate within a voltage supply range from 1.8 V to 5.5 V. All these devices operate with a clock frequency of 2 MHz (or less), over an ambient temperature range of - 40 ° C / + 85 ° C. Device M93C86 M93C76 M93C66 M93C56 M93C46 Table 1. Memory size versus organization Number of bits 16384 8192 409... |
STMicroelectronics |
EEPROM 1 Description The M93C46 (1 Kbit), M93C56 (2 Kbit), M93C66 (4 Kbit), M93C76 (8 Kbit) and M93C86 (16 Kbit) are electrically erasable programmable memory (EEPROM) devices accessed through the MICROWIRE™ bus protocol. The memory array can be configured either in bytes (x8b) or in words (x16b). The M93Cx6-W devices operate within a voltage supply range from 2.5 V to 5.5 V and the M93Cx6-R devices operate within a voltage supply range from 1.8 V to 5.5 V. All these devices operate with a clock frequency of 2 MHz (or less), over an ambient temperature range of - 40 ° C / + 85 ° C. Device M93C86 M93C76 M93C66 M93C56 M93C46 Table 1. Memory size versus organization Number of bits 16384 8192 409... |
STMicroelectronics |
EEPROM 1 Description The M93C46 (1 Kbit), M93C56 (2 Kbit), M93C66 (4 Kbit), M93C76 (8 Kbit) and M93C86 (16 Kbit) are electrically erasable programmable memory (EEPROM) devices accessed through the MICROWIRE™ bus protocol. The memory array can be configured either in bytes (x8b) or in words (x16b). The M93Cx6-W devices operate within a voltage supply range from 2.5 V to 5.5 V and the M93Cx6-R devices operate within a voltage supply range from 1.8 V to 5.5 V. All these devices operate with a clock frequency of 2 MHz (or less), over an ambient temperature range of - 40 ° C / + 85 ° C. Device M93C86 M93C76 M93C66 M93C56 M93C46 Table 1. Memory size versus organization Number of bits 16384 8192 409... |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor ... |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor ... |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor ... |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor TO-92LM NPN 。Silicon NPN transistor in a TO-92LM Plastic Package. / Features ,。 High Voltage Capability High Speed Switching. / Applications 、、。 High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. / Equivalent Circuit / Pinning 1 23 PIN1: Base PIN 2:Collector PIN 3:Emitter / hFE Classifications & Marking 。See Marking Instructions. http://www.fsbrec.com 1/6 MJE13002E2 Rev.E Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction Temperature Storage Temperature Range ... |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor TO-92LM NPN 。Silicon NPN transistor in a TO-92LM Plastic Package. / Features ,。 High Voltage Capability High Speed Switching. / Applications 。 High frequency electronic lighting ballast applications. / Equivalent Circuit / Pinning 1 23 PIN1:Base PIN 2:Collector PIN 3:Emitter / hFE Classifications & Marking 。See Marking Instructions. http://www.fsbrec.com 1/6 MJE13001E2 Rev.E Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC PC Tj Tstg DATA SHEET Rati... |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor TO-92LM NPN 。Silicon NPN transistor in a TO-92LM Plastic Package. / Features ,。 High Voltage Capability High Speed Switching. / Applications 。 High frequency electronic lighting ballast applications. / Equivalent Circuit / Pinning 1 23 PIN1:Base PIN 2:Collector PIN 3:Emitter / hFE Classifications & Marking 。See Marking Instructions. http://www.fsbrec.com 1/6 MJE13001C2 Rev.E Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC PC Tj Tstg DATA SHEET Rati... |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor TO-92LM NPN 。Silicon NPN transistor in a TO-92LM Plastic Package. / Features ,。 High Voltage Capability High Speed Switching. / Applications 。 High frequency electronic lighting ballast applications. / Equivalent Circuit / Pinning 1 23 PIN1:Base PIN 2:Collector PIN 3:Emitter / hFE Classifications & Marking 。See Marking Instructions. http://www.fsbrec.com 1/6 MJE13001A2 Rev.E Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC PC Tj Tstg DATA SHEET Rati... |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor ... |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor ... |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor TO-92 NPN 。Silicon NPN transistor in a TO-92 Plastic Package. / Features ,,, RoHS High voltage capability, high speed switching, wide SOA, RoHS compliant / Applications 110V 、、。 Suitable for 110V circuit mode, fluorescent lamp, electronic ballast. / Equivalent Circuit / Pinning 1 23 PIN1:Base PIN 2:Collector PIN 3:Emitter / hFE Classifications & Marking 。See Marking Instructions. http://www.fsbrec.com 1/6 MJE13003VH1 Rev.E Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction Temperature Storage Temperature Rang... |