MOSFET transistor

M93C06 STMicroelectronics 16Kbit / 8Kbit / 4Kbit / 2Kbit / 1Kbit and 256bit 8-bit or 16-bit wide

Description These electrically erasable programmable memory (EEPROM) devices are accessed through a Serial Data Input (D) and Serial Data Output (Q) using the MICROWIRE bus protocol. Figure 2. Logic Diagram Table 3. Memory Size versus Organization Device Number of Bits 16384 8192 4096 2048...
Features SUMMARY s s s s s s s s s s s Industry Standard MICROWIRE Bus Single Supply Voltage:
  – 4.5 to 5.5V for M93Cx6
  – 2.5 to 5.5V for M93Cx6-W
  – 1.8 to 5.5V for M93Cx6-R Dual Organization: by Word (x16) or Byte (x8) Programming Instructions that work on: Byte, Word or Entire Memory Self-timed Programming Cycle with AutoErase Ready/Busy Signal During Programming Speed:
  – 1MHz Clock Rate, 10ms Write Time (Current product, identified by process identification letter F or M)
  – 2MHz Clock Rate, 5ms Write Time (New Product, identified by process identification letter W or G or S) Sequential Read Operat...

Datasheet PDF File M93C06 Datasheet - 611.38KB

M93C06   M93C06  





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1 Description The M93C46 (1 Kbit), M93C56 (2 Kbit), M93C66 (4 Kbit), M93C76 (8 Kbit) and M93C86 (16 Kbit) are electrically erasable programmable memory (EEPROM) devices accessed through the MICROWIRE™ bus protocol. The memory array can be configured either in bytes (x8b) or in words (x16b). The M93Cx6-W devices operate within a voltage supply range from 2.5 V to 5.5 V and the M93Cx6-R devices operate within a voltage supply range from 1.8 V to 5.5 V. All these devices operate with a clock frequency of 2 MHz (or less), over an ambient temperature range of - 40 ° C / + 85 ° C. Device M93C86 M93C76 M93C66 M93C56 M93C46 Table 1. Memory size versus organization Number of bits 16384 8192 409...


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