| Description | A security fuse may be programmed to disable all further programming and to protect the design from being copied or reverse engineered. Product Family Profile Device Capacity Gate Array Equivalent Gates PLD Equivalent Gates TTL Equivalent Packages 20-Pin PAL Equivalent Packages Logic Modules Flip-F... |
| Features |
• 5V and 3.3V Families fully compatible with JEDEC specifications • Up to 2000 Gate Array Gates (6000 PLD equivalent gates) • Replaces up to 50 TTL Packages • Replaces up to twenty 20-Pin PAL® Packages • Design Library with over 250 Macro Functions • Gate Array Architecture Allows Completely Automatic Place and Route • Up to 547 Programmable Logic Modules • Up to 273 Flip-Flops • Data Rates to 75 MHz • Two In-Circuit Diagnostic Probe Pins Support Speed Analysis to 25 MHz • Built-In High Speed Clock Distribution Network • I/O Drive to 10 mA (5 V), 6 mA (3.3 V) • Nonvolatile, User Programmable ... |
| Datasheet |
 A1010B Datasheet - 179.98KB |
| Part Number | Description |
|---|---|
 Tyco Electronics |
5 TO 100 MHZ TO-8 CASCADABLE AMPLIFIER A101/SMA101 5 TO 100 MHZ TO-8 CASCADABLE AMPLIFIER · HIGH OUTPUT POWER: +22 dBm (TYP.) · HIGH THIRD ORDER IP: +36 dBm (TYP.) · HIGH SECOND ORDER IP: +60 dBm (TYP.) · LOW NOISE FIGURE: 3 dB (TYP.) Specifications (Rev. Date: 2/02)* Characteristics Frequency Small Signal Gain (min.) Gain Flatness (max.) Reverse Isolation Noise Figure (max.) Power Output @ 1 dB comp. (min.) IP3 IP2 Second Order Harmonic IP VSWR Input / Output (max.) DC Current @ 12 Volts (max.) Typical 0° to 50°C Typical Performance @ 25°C Guaranteed -54° to +85°C 3-120 MHz 17.0 dB ±0.2 dB 20 dB 3.0 dB 22.0 dBm +36 dBm +60 dBm +70 dBm 1.2:1 / 1.5:1 95 mA 5-100 MHz 16.0 dB ±0.2 dB 3.5 dB 21.0 dBm 5-100 MHz 15.5 dB ±0.3 dB 4... |
 MA-COM |
Cascadable Amplifier The A101 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This push-pull cascode design offers the benefits of low noise figure and high linearity. Both TO-8 and Surface Mount packages are hermetically sealed, and MIL-STD-883 environmental screening is available. Ordering Information Product Image Part Number A101 SMA101 MAAM-008734-0CA101 Package TO-8B Surface Mount SMA Connectorized ** ** The connectorized version is not RoHs compliant. Electrical Specifications: Z0 = 50Ω, VCC = +12 VDC Absolute Maximum Ratings Parameter Frequency Small Signal Gain (min) Gain Flatness (max) Reverse Isolation Noise F... |
 Wing Shing Computer |
2SA1011 2SA1011 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER www.DataSheet4U.com TO-220 ! Complement to 2SC2073 ABSOLUTE MAXIMUM RATINGS (TA=25℃) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating -180 -160 -5 -3 10 150 -50~150 Unit V V V A W ℃ ℃ ELECTRICAL CHARACTERISTICS (TA=25℃) Characteristic Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector- Emitter Saturation Voltage Current Gain Bandwidth Product Symbol ICBO IEBO hFE1 VCE(sat) fT Test Condition VCB= -120V , IE=0 VEB= -5V , I... |
 Toshiba Semiconductor |
PNP Epitaxial Silicon Transistor Free Datasheet http://www.datasheet4u.com/ Free Datasheet http://www.datasheet4u.com/ Free Datasheet http://www.datasheet4u.com/ ... |
 UTC |
2SA1012 UNISONIC TECHNOLOGIES CO., LTD 2SA1012 PNP SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION . 1 TO- 251 FEATURES *Low collector saturation voltage VCE(SAT)=-0.4V(max.) at Ic=-3A *High speed switching time: tS=1.0µs(Typ.) *Complementary to 2SC2562 1 1 TO - 252 TO-220 1 TO-220F *Pb-free plating product number: 2SA1012L ORDERING INFORMATION Order Number Normal Lead Free Plating 2SA1012-x-TA3-T 2SA1012L-x-TA3-T 2SA1012-x-TF3-T 2SA1012L-x-TF3-T 2SA1012-x-TM3-T 2SA1012L-x-TM3-T 2SA1012-x-TN3-R 2SA1012L-x-TN3-R 2SA1012-x-TN3-T 2SA1012L-x-TN3-T Package www.DataSheet4U.com TO-220 TO-220F TO-251 TO-252 TO-252 Pin Assignment 123 BCE BCE BCE BCE BCE Packing Tube Tube Tube T... |
UTC |
2SA1013 The UTC 2SA1013 is a PNP epitaxial silicon transistor, it uses UTC’s advanced technology to provide the customers with high BVCEO and high DC current gain, etc. The UTC 2SA1013 is suitable for power switching and color TV vertical deflection output, etc. FEATURES * High BVCEO * High DC current gain * Large continuous collector current capability ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SA1013L-x-AB3-R 2SA1013G-x-AB3-R 2SA1013L-x-T92-B 2SA1013G-x-T92-B 2SA1013L-x-T92-K 2SA1013G-x-T92-K 2SA1013L-x-T9N-B 2SA1013G-x-T9N-B 2SA1013L-x-T9N-K 2SA1013G-x-T9N-K Package SOT-89 TO-92 TO-92 TO-92NL TO-92NL Pin assignment 123 BCE BCE BCE BCE BCE Packing Tape Reel T... |
 Shanghai |
Silicon PNP Epitaxial Transistor :The A1013 is designed for color TV class B sound output applications Features: ●High voltage: VCEO=160V ●Complementary to C2383 Chip Appearance Chip Size Chip Thickness Bonding Pad Size Front Metal Backside Metal Scribe line width Wafer Size Base 1100um×1100um 210±20um 240um×240um Emitter 330um×260um Al Au 60um 6 inch Electrical Characteristics( Ta=25℃) Characteristic Collector Cutoff Current Emitter Cutoff Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector Saturation Voltage Symbol ICBO IEBO BVCBO BVCEO BVEBO hFE VCE(sat) Test Condition VCB=-150V, IE=0 VEB=-6V, IC=0 IC=-0.1mA IC=-10mA IE=-0.1mA VCE=-5V, IC... |
Toshiba Semiconductor |
2SA1013 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1013 Color TV Verttical Deflection Output Applications Power Switching Applications 2SA1013 Unit: mm • High voltage: VCEO = −160 V • Large continuous collector current capability • Recommended for vertical deflection output & sound output applications for line-operated TV. • Complementary to 2SC2383. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg −160 V −160 V −6 V −1 A −0.5 A 900 ... |
 DOESHARE |
Plastic-Encapsulate Transistors SOT-23 Plastic-Encapsulate Transistors(PNP) FEATURES • Complementary to C1815 • Power Dissipation of 200mW • High Stability and High Reliability • SOT-23 Small Outline Plastic Package • Epoxy UL: 94V-0 • Mounting Position: Any MARKING : BA SOT-23 Package 1. BASE 2. EMITTER 3. COLLECTOR Maximum Ratings & Thermal Characteristics (Ratings at 25℃ ambient temperature unless otherwise specified.) Parameters Collector-Base Voltage Symbol VCBO Value -50 Unit V Collector-Emitter Voltage VCEO -50 V Emitter -Base Voltage VEBO -5 V Collector Current-Continuous IC -150 mA Collector Power Dissipation PC 200 mW Junction Temperature Tj 150 ℃ Storage Temperature Tstg -55-+150 ℃ ... |
 WEITRON |
PNP General Purpose Transistors PNP General Purpose Transistors P b Lead(Pb)-Free A1015 TO-92 1. EMITTER 1 2. COLLECTOR 3. BASE 2 3 MAXIMUM RATINGS* (TA=25°C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter Voltage VCEO -50 V Collector-Base Voltage VCBO -50 V Emitter-Base Voltage VEBO -5.0 V Collector Current Continuous IC -150 mA Total Device Dissipation TA=25°C PD 0.4 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 to + 150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ELECTRICAL CHARACTERISTICS Characteristics OFF CHARACTERISTICS Collector-Base Breakdown Voltage, IC = -100µA, IE = ... |
 ON Semiconductor |
PNP Epitaxial Silicon Transistor 98AON13879G Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. TO−92 3 4.83X4.76 LEADFORMED PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right ... |
 NXP |
PNP general purpose transistor PNP transistor in a plastic TO-92; SOT54 package. NPN complement: 2PC1815. 1 handbook, halfpage 2PA1015 PINNING PIN 1 2 3 base collector emitter DESCRIPTION 2 3 2 1 3 MAM285 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open... |
Toshiba Semiconductor |
Silicon PNP Transistor 2SA1015(L) TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015(L) Audio Frequency Amplifier Applications Low Noise Amplifier Applications • High voltage and high current: VCEO = −50 V (min), IC = −150 mA (max) • Excellent hFE linearity: hFE (2) = 80 (typ.) at VCE = −6 V, IC = −150 mA : hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) • Low noise: NF = 0.2dB (typ.) (f = 1 kHz) • Complementary to 2SC1815 (L) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −50 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −5 V Collector current IC −150 mA Base current IB −50 mA Collector power d... |
 Elite |
PNP Epitaxial Silicon Transistor A1015 PNP Epitaxial Silicon Transistor LOW FREQUENCY AMPLIFIER Collection Dissipation : PC(max) = 400mW Collector-Emitter Voltage : VCEO = -50V Absolute Maximum Ratings (TA=25oC) Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Collector Current IC -150 mA Collector Dissipation Junction Temperature Storage Temperature PC TJ TSTG 400 mW 150 oC -55~+150 oC Electrical Characteristics (TA=25oC) Characteristic Symbol Test Conditions Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current BVCBO BVCEO ICBO IC= -100µA, IE=0 IC= -0.1mA, IB=0 VCB= -50V, IE=0 Emitter Cut-off Cu... |
 Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor KSA1015 — PNP Epitaxial Silicon Transistor September 2015 KSA1015 PNP Epitaxial Silicon Transistor Features • Low-Frequency Amplifier • Collector-Base Voltage: VCBO = -50 V • Complement to KSC1815 Ordering Information Part Number KSA1015GRTA KSA1015YTA Marking A1015 A1015 123 Straight Lead Bulk Packing TO-92 1. Emitter 12 3 2. Collector 3. Base Bent Lead Tape & Reel Ammo Packing Package TO-92 3L TO-92 3L Packing Method Ammo Ammo Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In additio... |
 Jiangsu Changjiang |
PNP Transistor JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A1015 TRANSISTOR (PNP) TO—92 1.EMITTER FEATURES Power dissipation MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol VCBO VCEO VEBO IC PD TJ, Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Total Device Dissipation Junction and Storage Temperature Value -50 -50 -5 -150 400 -55-150 Units V V V mA mW ℃ 2.COLLECTOR 3.BASE 1 2 3 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitte... |