MOSFET transistor

D83-004 Fuji Electric SCHOTTKY BARRIER DIODE

Description ESAD83-004 (30A) (40V / 30A ) SCHOTTKY BARRIER DIODE Features Low VF Super high speed switching High reliability by planer design Outline drawings, mm 15.5 Max. 13.0 10.0 Ø3.2±0.1 4.5±0.2 2.0 5.0±0.1 19.5±0.2 3.0±0.2 1.5 15±0.2 1 23 2.2 1.6 1.6 1.1 5.45 5.45 14.5±0.2 0.5 1.5 7.2±0.1 J...
Features Low VF Super high speed switching High reliability by planer design Outline drawings, mm 15.5 Max. 13.0 10.0 Ø3.2±0.1 4.5±0.2 2.0 5.0±0.1 19.5±0.2 3.0±0.2 1.5 15±0.2 1 23 2.2 1.6 1.6 1.1 5.45 5.45 14.5±0.2 0.5 1.5 7.2±0.1 JEDEC EIAJ SC-65 Connection diagram Applications High speed power switching 1 23 Maximum ratings and characteristics Absolute maximum ratings Item Symbol Conditions Rating Unit Repetitive peak reverse voltage VRRM 40 V Non-repetitive peak reverse voltage VRSM Average output current Io Suege current IFSM Operating junction temperature Tj tw=50...

Datasheet PDF File D83-004 Datasheet - 48.58KB

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Similar Datasheet

Part Number Description
D83-006
manufacturer
Fuji Electric
SCHOTTKY BARRIER DIODE
ESAD83-006R Schottky Barrier Diode http://www.fujisemi.com FUJI Diode Maximum Rating and Characteristics Maximum ratings (at Ta=25˚C unless otherwise specified.) Item Symbols Repetitive peak reverse voltage VRRM Average output current Io Non-repetitive forward surge current** Operating junction temperature Storage temperature Note* Out put current of center tap full wave connection. Note** Rating per element IFSM Tj Tstg Conditions - 50Hz Square wave duty =1/2 Tc = 119˚C Sine wave, 10ms 1shot - - Ratings 60 30 * 120 150 -40 to +150 Units V A A ˚C ˚C Electrical characteristics Item Forward voltage*** Reverse current*** Thermal resistance Note*** Rating per element (at Ta=25˚C ...


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