| Description | Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer ... |
| Features |
ical surface mount application. The through-hole version (IRFZ14L) is available for lowprofile applications.
S
D 2 Pak
T O -2 6 2
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
10 7.2 40 3...
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| Datasheet |
 IRFZ14L Datasheet - 240.12KB |
| Part Number | Description |
|---|---|
 International Rectifier |
HEXFET Power MOSFET PD - 90440A IRFZ10 D G D S TO-220AB www.DataSheet4U.com G D S Gate Drain Source www.irf.com 1 06/24/05 ww.DataSheet4U.com IRFZ10 2 www.irf.com IRFZ10 www.irf.com 3 IRFZ10 4 www.irf.com IRFZ10 www.irf.com 5 IRFZ10 6 www.irf.com IRFZ10 Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + + - • dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test + - * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D= P.W. Period VGS=10V D.U.T. ISD Waveform Reverse Recovery C... |
 Vishay |
Power MOSFET Third Generation Power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. TO-220AB IRFZ10PbF SiHFZ10-E3 IRFZ10 SiHFZ10 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage VDS VGS Continuous Drain Current TC = 25 °C VGS at 10 V TC = 100 °C ID Pulsed Drain ... |
 Fairchild Semiconductor |
Power MOSFET $GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 60V ♦ Lower RDS(ON): 0.097Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed (1) Gate-to-Source Voltage Single Pulsed Avalanche Energy (2) Avalanche Current (1) Repetitive Avalanche Energy (1) Peak Diode Recovery dv/dt (3) Total Power Dissipation (TC=25°C) Linear ... |
International Rectifier |
HEXFET Power MOSFET ... |
Vishay |
Power MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. TO-220AB IRFZ14PbF SiHFZ14-E3 IRFZ14 SiHFZ14 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltagef Gate-Source Voltagef Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor VGS at 10 V TC =... |
 Samsung |
Power MOSFET )($785(6 Qýýý$YDODQFKHýý5XJJHGýý7HFKQRORJ\ Qýýý5XJJHGýý*DWHýý2[LGHýý7HFKQRORJ\ý Qýýý/RZHUýý,QSXWýý&DSDFLWDQFH Qýýý,PSURYHGýý*DWHýý&KDUJH Qýýý([WHQGHGýý6DIHýý2SHUDWLQJýý$UHD Qýýýìæèýý2SHUDWLQJýý7HPSHUDWXUH Qýýý/RZHUýý/HDNDJHýý&XUUHQWýýãýýìíýP$ýõ0D[ïôýý#ýý9'6ý ýçí9 Qýýý/RZHUýý5'6õ21ôýýãýýíïíäæý:ýõ7\Sïô $EVROXWHýý0D[LPXPýý5DWLQJV 6\PERO 9'66 ,' ,'0 9*6 ($6 ,$5 ($5 GYîGW 3' 7-ýýñý767* 7/ &KDUDFWHULVWLF 'UDLQðWRð6RXUFHý9ROWDJH &RQWLQXRXVýý'UDLQýý&XUUHQWýýõ7& ëèR&ô &RQWLQXRXVýý'UDLQýý&XUUHQWýýõ7& ìííR&ô 'UDLQýý&XUUHQWð3XOVHGýýýýýýýýýýýýýýýýýýýýýýýýýýýýýý2ì *DWHðWRð6RXUFHýý9ROWDJH 6LQJOHýý3XOVHGýý$YDODQFKHýý(QHUJ\ýýýýýýýýýý2ë $YDODQFKHýý&XUUHQW... |
Vishay |
Power MOSFET Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extermely efficient reliabel deviece for use in a wide variety of applications. The D2PAK is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to... |
International Rectifier |
Advanced Process Technology / Surface Mount Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance... |
Vishay |
Power MOSFET Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extermely efficient reliabel deviece for use in a wide variety of applications. The D2PAK is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to... |