| Description | 3DD13001S is a silicon npn power transistor. The main process include high voltage planer process,triple difussion process and multi-surface passivation. Absolute maximum ratings (Tc=25 ) ITEM Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector dissipa... |
| Features |
High breakdown voltage High current capability High switching speed High reliability
Application
Energy-saving light Electronic ballasts High frequency switching power supply High frequency power transform Commonly power amplifier circuit
Description
3DD13001S is a silicon npn power transistor. The main process include high voltage planer process,triple difussion process and multi-surface passivation.
Absolute maximum ratings (Tc=25 )
ITEM Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Junction temperature
...
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| Datasheet |
 D13001S Datasheet - 124.55KB |
| Part Number | Description |
|---|---|
 RCA |
Rectifiers File No. 784 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __ mlm5LJTI Solid State Division Rectifiers D1300 Series R II I' I' ANODE ILead No.2) CATHODE (Lead No.1) I "Modified TOa1" H-1026 O.25-A, 100-to-400-V Silicon RectifierF General·Purpose Types for Low·Power Applications Features: • Hermetically sealed metal case, leads insulated from case modified TO·l a Operation at ambient temperatures to 1250 C oil Single·ended for ease of handling and installation ~Package "'Modified TO·l,"' 100 V D1300A 200V 013008 400 V 013000 RCA D1300·series devices are diffused·junction silicon rec· tifiers in a hermetically sealed ("modified TO·l") 2·lead case. These devices differ... |
 CDIL |
NPN Silicon Power Transistor SYMBOL VALUE VCBO 600 Collector -Base Voltage VCEO 400 Collector -Emitter ( sus) Voltage VEBO 9.0 Emitter -Base Voltage IC 1.5 Collector Current Continuous ICM 3.0 Peak (1) IB 0.75 Base Current Continuous IBM 1.5 Peak (1) IE 2.25 Emitter Current Continuous IEM 4.5 Peak (1) PD 1.4 Power Dissipation @ Ta=25 deg C 11.2 Derate Above 25 deg C PD 45 Power Dissipation @ Tc=25 deg C 320 Derate Above 25 deg C Tj, Tstg -65 to +150 Operating And Storage Junction Temperature Range THERMAL RESISTANCE Rth (j-c) 3.12 Junction to Case Rth (j-a) 89 Junction to Ambient Maximum Lead Temperature for Soldering Purposes: 1/8" from Case TL 275 for 5 Seconds. (1) Pulse Test: Pulse Width= 5ms Duty Cycle =10% ELECTRI... |
 PENGAI |
NPN Transistor SHENZHENPENGAI SEMICONDUCTOR CO.LTD D13003D ： 、、。 ： 、、、、。 ： TO-126 TEL:0755-27656829 FAX:0755-23443106 NPN （TC=25℃） - - - （TC=25℃） - - - - - - - BVce0 BVcb0 BVeb0 Icm Pcm Tj Tstg ≥400 ≥600 ≥9 1.8 32 150 -55~150 V V V A W ℃ ℃ BVce0 BVcb0 BVeb0 Ice0 Icb0 Ieb0 Hfe Vcesat Ts fT IC=1mA IB=0 Ic=1mA IE=0 IE=1mA IC=0 Vce=400V IB=0 Vcb=680V IE=0 Veb=7V Ic=0 Vce=5V Ic=0.2A Vce=5V Ic=1mA Ic=1A Ib=0.5A Ic=250m A Vce=10V Ic=0.1A f=1MHz 400 700 9 20 10 10 10 35 8 0.6 1.5 3.0 8 V V V uA uA uA uS MHZ Http://www.paisemi.com 1 SHENZHENPENGAI SEMICONDUCTOR CO.LTD TEL:0755-27656829 FAX:0755-23443106 Ic （A ） Vce（sat）（V ）－ 0.5 50mA 0.4 40mA 0.3 30mA 0.2 20mA 10mA ... |
 ETC |
NPN Silicon Bipolar Transistor www.DataSheet4U.com NPN ■■ ：、。 D13005 C B E ■■ （Ta=25℃） - - - ■■（Ta=25℃） - - - - - - - ■■ HFE(1) （Tc=25℃） （Ta=25℃） VCBO VCEO VEBO IC IB PD Tj Tstg 700 400 9 4 2 70 2 150 -55-150 V V V A A W ℃ ℃ B C E HFE(1) Vce=5 V,Ic=1.0A BVcbo Ic=1 mA ,Ie=0 BVceo Ic=10 mA ,Ib=0 BVebo Ie=1 mA ,Ic=0 Icbo Iebo Vcb=700 V ,Ie=0 Veb=9 V ,Ic=0 10 700 400 9 40 β V V V 1 1 0.6 1.2 0.6 1.6 0.8 4.0 0.9 mA mA V V MHz uS uS uS Vce(sat) Ic=2A ,Ib=0.5A Vbe(sat) Ic=2A ,Ib=0.5A fT ton ts tf D13005A A 10-25 Vce=10V, Ic=500mA, f=1.0MHz 4 Vce=10V, Ic=2A, IB1=IB2=400mA D13005B B 20-35 D13005C C 30-40 QR027 HFE(1) ... |
ETC |
Low-frequency amplification shell rated bipolar transistors www.DataSheet4U.com R µÍÆ·Å´ó¹Ü¿Ç¶î¨ÄË«¼Ð¾§Ìå D13005A ²úÆ·ÌØÐÔ ¡ô ¡ô ¡ô ¡ô ¡ô ¸ßÄÍѹ ¸ßµçÁ÷ÈÝ¿ ¸ß¿ª¹ØËÙ¶È ¸ß¿ÉÐÔ »·±£¨ RoHS£©²úÆ· Ö÷ÒªÓÃ; ¡ô ¡ô ¡ô ¡ô ¡ô ½ÚÄÜµÆ µç×ÓÕòÁ÷Æ ¸ßƵ¿ª¹ØçÔ´ ¸ßƵ¹¦ÂÊ±ä» Ò»°ã¹¦ÂÊ·Å´óµç ¸ÅÊö 3DD13005A ÊÇ ÓõÄÖ÷Òª¹¤Õ¼ÊõУº¸ßÑƽ桢ÈýØÀ©É ¼ÊõµÈ£¬²¢ÇÒÉ¡ÁËÄܹ»×î´óÏÞ¶æç÷Ý¿Óë Ä͵ç³å»÷ÐÔ·¢ÉäÇø¸ñºáÏòè¼Æ¡£ NPN Ë«¼ÐÍ´ó¹¦Âʾ§ÌåÜ£¬ÖÆÔì²É ¾ø¶Ô×î´ó ¨Öµ Ïî ¼¯µç«¡ª»ùÖ±Á÷ѹ ¼¯µç«¡ª·¢ÉäÖ±Á÷ѹ ·¢É伫¡ª»ùÖ±Á÷µçѹ ×î´ó¼¯µç«Ö±Á÷ ×î´ó¼¯µç«Âö³åÁ÷ ×î´ó»ù¼«Ö±Á÷µç ×î´ó»ù¼«Âö³åµçÁ÷£¨ ×î´ó¼¯µç«ºÄÉ¢¹¦ÂÊ ×î´ó¼¯µç«ºÄÉ¢¹¦ÂÊ ×î¸ß½áΠÖü´æÎÂ¶È ×¢ (Tc=25¡æ Ä¿ ) ·û VCBO VCEO VEBO ºÅ Êý Öµ 450 400 9 4 8 2 4 40 75 150 -55~150 ¡æ ¡æ µ¥ V V V A A A A W W λ (DC) £¨ pulse£© pulse£© TO-126 TO-220 (DC... |
 JILIN SINO-MICROELECTRONICS |
Low-frequency amplification shell rated bipolar transistors R 3DD13005K µÍÆ·Å´ó¹Ü¿Ç¶î¨ÄË«¼Ð¾§Ìå D13005K ÔÐØÌ·Æú² ¸ßÄÍѹ ¸ßµçÁ÷ÈÝ¿ ¸ß¿ª¹ØËÙ¶È ¸ß¿ÉÐÔ Ö÷ÒªÓÃ; ½ÚÄÜµÆ µç×ÓÕòÁ÷Æ ¸ßƵ¿ª¹ØçÔ´ ¸ßƵ¹¦ÂÊ±ä» Ò»°ã¹¦ÂÊ·Å´óµç ¸ÅÊö 3DD13005K ÊÇ µÄÖ÷Òª¹¤Õ¼ÊõÓÐ ¸ßѹƽÃæ¤ÒÕ¼Êõ ÊõµÈ ²¢ÇÒÉÈ¡ÁËÄܹ»×î´óÏÞ¶µ¼æç÷Ý¿ÓëÍ µç³å»÷ÐÔÄ·¢ÉäÇø͸ñºáÏòè¼Æ NPN Ë«¼ÐÍ´ó¹¦Âʾ§ÌåÜ ÈýÖØÀ©É¢¼ ÖÆÔìвÉÓà ¾ø¶Ô×î´ó ¨Öµ Ïî ¼¯µç« ¼¯µç« ·¢É伫 ×î´ó¼¯µç«Ö±Á÷ ×î´ó¼¯µç«ºÄÉ¢¹¦ÂÊ ×î¸ß½áΠÖü´æÎÂ¶È »ù¼«Ö±Á÷µçѹ ·¢É伫ֱÁ÷µçѹ »ù¼«Ö±Á÷µçѹ Ä¿ (Tc=25 ) ·û VCBO VCEO VEBO Ic ºÅ Êý Öµ 700 400 9 4 75 150 -55~+150 µ¥ V V V A W λ TO-220 Pc Tj Tstg 2004.01 1/5 Free Datasheet http://www.datasheetlist.com/ D13005K µçÌØÐÔ Ïî ¼¯µç« ¼¯µç« ·¢É伫 ¼¯µç« ¼¯µç« ·¢É伫 Ö±Á÷µçÔöÒæ ¼¯µç« »ù¼« ϽµÊ±¼ä Öü´æʱ¼ä ... |
 JILIN SINO |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR of Changes 、 ：200910C 6/6 ... |
 AUK |
NPN Silicon Power Transistor STD13007 NPN Silicon Power Transistor SWITCHING REGULATOR APPLICATIONS Features • High speed switching • High Collector Voltage : VCBO = 700V • Suitable for Switching Regulator and Motor Control PIN Connection Ordering Information Type NO. Marking STD13007 STD13007 Package Code TO-220AB BCE B C E Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Base current (DC) Collector Power dissipation (Tc=25℃) Junction temperature Storage temperature Characteristic Thermal resistance Junction-case Junction-ambient Symbol VCBO VCEO VEBO IC ICM IB PC Tj Tstg Symbol Rth(J-C) Rth(J-... |
AUK |
NPN Silicon Power Transistor www.DataSheet4U.com Semiconductor STD13007F NPN Silicon Power Transistor Features • High speed switching • High Collector Voltage : VCBO = 700V • Suitable for Switching Regulator and Motor Control Ordering Information Type NO. STD13007F Marking STD13007 Package Code TO-220F Outline Dimensions unit : mm PIN Connections 1. Base 2. Collector 3. Emitter KST-H035-000 1 STD13007F Absolute maximum ratings www.DataSheet4U.com Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Base current (DC) Collector Power dissipation (Tc=25℃) Junction temperature Storage temperature (Ta=25°C) Symbol VCBO VCEO VEBO IC I... |
ETC |
Low-frequency amplification shell rated bipolar transistors www.DataSheet4U.com R 3DD13007K µÍÆ·Å´ó¹Ü¿Ç¶î¨ÄË«¼Ð¾§Ìå D13007K ²úÆ·ÌØÐÔ ¸ßÄÍѹ ¸ßµçÁ÷ÈÝ¿ ¸ß¿ª¹ØËÙ¶È ¸ß¿ÉÐÔ Ö÷ÒªÓÃ; ¸ßƵ¿ª¹ØçÔ´ ½ÚÄܵÆç×ÓÕòÁ÷ ¸ßƵ¹¦ÂÊ±ä» Ò»°ã¹¦ÂÊ·Å´óµç ÒýÏ߶ËÐòºÅ¼°µÈ§çÂ·Í ¸ÅÊö 3DD13007K ÊÇ µÄÖ÷Òª¹¤Õ¼ÊõÓÐ ¸ßѹƽÃæ¤ÒÕ¼Êõ ÊõµÈ ²¢ÇÒÉÈ¡ÁËÄܹ»×î´óÏÞ¶µ¼æç÷Ý¿ÓëÍ µç³å»÷ÐÔÄ·¢ÉäÇø͸ñºáÏòè¼Æ NPN Ë«¼ÐÍ´ó¹¦Âʾ§ÌåÜ ÈýÖØÀ©É¢¼ ÖÆÔìвÉÓà ¾ø¶Ô×î´ó ¨Öµ Ïî ¼¯µç« ¼¯µç« ·¢É伫 ×î´ó¼¯µç«Ö±Á÷ ×î´ó¼¯µç«ºÄÉ¢¹¦ÂÊ ×î¸ß½áΠÖü´æÎÂ¶È »ù¼«Ö±Á÷µçѹ ·¢É伫ֱÁ÷µçѹ »ù¼«Ö±Á÷µçѹ Ä¿ (Tc=25 ) ·û VCBO VCEO VEBO Ic Pc Tj Tstg ºÅ Êý Öµ 700 400 9 8 80 150 -55~+150 µ¥ V V V A W λ 2004.01 1/5 www.DataSheet4U.com D13007K µçÌØÐÔ Ïî ¼¯µç« ¼¯µç« ·¢É伫 ¼¯µç« ¼¯µç« ·¢É伫 Ö±Á÷µçÔöÒæ ¼¯µç« »ù¼« ϽµÊ±¼ä Öü´æÊ... |
JILIN SINO-MICROELECTRONICS |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD13007M MAIN CHARACTERISTICS Package IC VCEO PC(TO-220C) 8A 400V 80W z z z z z APPLICATIONS z Energy-saving ligh z Electronic ballasts z High frequency switching power supply z High frequency power transform z Commonly power amplifier z z z z z （RoHS） FEATURES z High breakdown voltage z High current capability z High switching speed z High reliability z RoHS product ORDER MESSAGE Order codes 3DD13007M-O-C-N-B Marking D13007M Halogen Free NO Package TO-220C Packaging Tube ：200910C 1/5 R ABSOLUTE RATINGS (Tc=25℃) 3DD13007M Parameter Symbol Value Unit — Collector- Emitter Voltage（VBE=... |
JILIN SINO-MICROELECTRONICS |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR of Changes TO-262 ：200912D 6/6 ... |
ETC |
NPN Silicon Bipolar Transistor ( DataSheet : www.DataSheet4U.com ) NPN ■■ ：、。 D13009 C B E ■■ （Ta=25℃） - - - ■■（Ta=25℃） - - - - - - - ■■ HFE(1) （Tc=25℃） （Ta=25℃） VCBO VCEO VEBO IC IB PD Tj 700 400 9 12 6 100 2 150 V V V A A W ℃ Tstg -55-150 ℃ B C E HFE(1) Vce=5 V,Ic=5.0A BVcbo Ic=1 mA ,Ie=0 BVceo Ic=10 mA ,Ib=0 BVebo Ie=1 mA ,Ic=0 Icbo Vcb=700 V ,Ie=0 Iebo Veb=9 V ,Ic=0 Vce(sat) Ic=8A ,Ib=1.6A Vbe(sat) Ic=8A ,Ib=1.6A 8 700 400 9 40 β V V V 1 1 1.5 1.6 mA mA V V MHz 1.1 3.0 0.7 uS uS uS fT ton ts tf D13009 A 10-25 Vce=10V, Ic=500mA, f=1.0MHz 4 Vce=10V, Ic=2A, IB1=IB2=400mA B 20-35 C 30-40 QR027 HFE(1) www.DataSheet4U.com www.DataSheet4U.com ... |
JILIN SINO-MICROELECTRONICS |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR of Changes 2011-5-26 200910C 201105D TO-3PB ：201105D 6/6 ... |
RCA |
Rectifiers File No. 784 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __ mlm5LJTI Solid State Division Rectifiers D1300 Series R II I' I' ANODE ILead No.2) CATHODE (Lead No.1) I "Modified TOa1" H-1026 O.25-A, 100-to-400-V Silicon RectifierF General·Purpose Types for Low·Power Applications Features: • Hermetically sealed metal case, leads insulated from case modified TO·l a Operation at ambient temperatures to 1250 C oil Single·ended for ease of handling and installation ~Package "'Modified TO·l,"' 100 V D1300A 200V 013008 400 V 013000 RCA D1300·series devices are diffused·junction silicon rec· tifiers in a hermetically sealed ("modified TO·l") 2·lead case. These devices differ... |
RCA |
Rectifiers File No. 784 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __ mlm5LJTI Solid State Division Rectifiers D1300 Series R II I' I' ANODE ILead No.2) CATHODE (Lead No.1) I "Modified TOa1" H-1026 O.25-A, 100-to-400-V Silicon RectifierF General·Purpose Types for Low·Power Applications Features: • Hermetically sealed metal case, leads insulated from case modified TO·l a Operation at ambient temperatures to 1250 C oil Single·ended for ease of handling and installation ~Package "'Modified TO·l,"' 100 V D1300A 200V 013008 400 V 013000 RCA D1300·series devices are diffused·junction silicon rec· tifiers in a hermetically sealed ("modified TO·l") 2·lead case. These devices differ... |