| Description | ·With TO-3 package ·Complement to type 2SC1584/1585/1586 APPLICATIONS ·For power switching and general purpose applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2SA907 VCBO Collecto... |
| Features |
2SA909 VCEsat Collector-emitter saturation voltage 2SA907 ICBO Collector cut-off current 2SA908 2SA909 IEBO hFE fT Emitter cut-off current DC current gain Transition frequency IC=-10A; IB=-1A VCB=-100V; IE=0 VCB=-150V; IE=0 VCB=-200V; IE=0 VEB=-6V; IC=0 IC=-5A ; VCE=-4V IC=-0.5A ; VCE=-12V IC=-50mA ;IB=0 CONDITIONS
2SA907/908/909
SYMBOL
MIN -100 -150 -200
TYP.
MAX
UNIT
V
-3.0
V
-1.0
mA
-1.0 30 10
mA
MHz
2
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA907/908/909
Fig.2 outline dimensions (unindicated toleran...
|
| Datasheet |
 2SA907 Datasheet - 138.01KB |
| Part Number | Description |
|---|---|
 Panasonic Semiconductor |
Silicon PNP Transistor ... |
 INCHANGE |
PNP Transistor ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -18V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage ·Complement to Type 2SC1568 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -20 V VCEO Collector-Emitter Voltage -18 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1 A ICP Collector Current-Pulse -2 A PC Collector Power Dissipation 1.2 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.is... |
 SavantIC |
Silicon POwer Transistors ·With TO-126 package ·Complement to type 2SC1568 ·Low collector saturation voltage APPLICATIONS ·For audio frequency power amplifier PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION Absolute Maximun Ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -20 -18 -5 -1 -2 1.2 150 -55~150 UNIT V V V A A W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors CHARACTERISTI... |
 ETC |
Transistors Transistors 2SA9012 ... |
ETC |
Transistors Transistors 2SA9015 ... |
ETC |
PNP Transistor ... |
ETC |
PNP Transistor ... |
ETC |
PNP Transistor www.DataSheet4U.com ... |
 Inchange Semiconductor |
POWER TRANSISTOR ·High Power Dissipation- : PC= 150W(Max.)@TC=25℃ ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min.) ·Complement to Type 2SC1584 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -15 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -5 A 150 W 150 ℃ Tstg Storage Temperature -65~150 ℃ isc website： www.iscsemi.... |
SavantIC |
(2SA907 - 2SA909) Silicon POwer Transistors ·With TO-3 package ·Complement to type 2SC1584/1585/1586 APPLICATIONS ·For power switching and general purpose applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2SA907 VCBO Collector-base voltage 2SA908 2SA909 2SA907 VCEO Collector-emitter voltage 2SA908 2SA909 VEBO IC IB PC Tj Tstg Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE -100 -150 -200 -100 -150 -200 -6 -15 -5 150 150 -65~150 V A A W V V UNIT SavantIC Semiconductor www.DataSheet4U.co... |
Inchange Semiconductor |
POWER TRANSISTOR ·High Power Dissipation- : PC= 150W(Max.)@TC=25℃ ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) ·Complement to Type 2SC1585 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -15 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -5 A 150 W 150 ℃ Tstg Storage Temperature -65~150 ℃ isc website：www.iscsemi.... |
SavantIC |
(2SA907 - 2SA909) Silicon POwer Transistors ·With TO-3 package ·Complement to type 2SC1584/1585/1586 APPLICATIONS ·For power switching and general purpose applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2SA907 VCBO Collector-base voltage 2SA908 2SA909 2SA907 VCEO Collector-emitter voltage 2SA908 2SA909 VEBO IC IB PC Tj Tstg Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE -100 -150 -200 -100 -150 -200 -6 -15 -5 150 150 -65~150 V A A W V V UNIT SavantIC Semiconductor www.DataSheet4U.co... |
Inchange Semiconductor |
POWER TRANSISTOR ·High Power Dissipation- : PC= 150W(Max.)@TC=25℃ ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min.) ·Complement to Type 2SC1586 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -15 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -5 A 150 W 150 ℃ Tstg Storage Temperature -65~150 ℃ isc website：www.iscsemi.... |
 TIP |
PNP Transistor -102 - ... |
ETC |
SI PNP EPITAXIAL PLANAR TRANSISTOR ... |
Panasonic Semiconductor |
PNP Transistor ... |