| Description | The A100N50X4 is high performance Aluminum Nitride (AlN) chip termination intended as an alternative to Beryllium Oxide (BeO). The termination is well suited to all cellular frequency bands such as; AMPS, GSM, DCS, PCS, PHS and UMTS. The high power handling makes the part ideal for terminating circu... |
| Features |
• RoHS Compliant • 100 Watts • DC - 2.7 GHz • AlN Ceramic • Non-Nichrome Resistive Element • Low VSWR • 100% Tested • Small Size Resistive Element Substrate Terminal Finish Operating Temperature Thick film AlN Ceramic Matte Tin over Nickel Barrier -55 to +150°C (See de rating chart) Tolerance is ±0.010”, unless otherwise specified. Designed to meet of exceed applicable portions of MIL-E-5400. All dimensions in inches. Electrical Specifications Resistance Value: Power: Frequency Range: V.S.W.R. www.DataSheet.net/ 50 Ohms, ± 2% 100 Watts DC – 2.7 GHz 1.1:1 to 2.7 GHz Specification based on ... |
| Datasheet |
 A100N50X4 Datasheet - 257.33KB |
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