| Description | ... |
| Features |
...
|
| Datasheet |
 TM2313 Datasheet - 693.94KB |
| Part Number | Description |
|---|---|
 Taimao |
N-Channel 20-V(D-S) MOSFET ShenzhenTaimaoTechnology Co.,Ltd. SOT-23 Plastic-Encapsulate MOSFETS TM2312 N-Channel 20-V(D-S) MOSFET SOT-23 APPLICATIONS z DC/DC Converters z Load Switching for Portable Applications 1. GATE 2. SOURCE 3. DRAIN MARKING: S12 Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature t=5s t=5s Symbol VDS VGS ID IDM IS PD RθJA TJ Tstg Value 20 ±8.0 5 20 1.04 0.35 357 150 -50 ~+150 W ℃/W ℃ A Unit V B,Dec,2011 Electrical characteristics (Ta=25℃ unless otherwis... |
 Titan Micro |
Digital audio processing circuit control SHENZHEN TITAN M ICRO ELECTRONI CS CO., LTD. VDD AGND TREB_L TREB_R RIN ROUT LOUD_R RIN4 RIN3 RIN2 RIN1 LOUD_L LIN4 LIN3 1 2 3 4 5 TM2314 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 REF CLK DATA DGND OUT_L OUT_R BOUT_R BIN_R BOUT_L BIN_L LOUT LIN LIN1 LIN2 SHENZHEN TITAN M ICRO ELECTRONI CS CO., LTD. SHENZHEN TITAN M ICRO ELECTRONI CS CO., LTD. VS IS SVR Rin Vcl Sin RI Ginmin Ginmax 1 2 3 2 7 17 6 60 35 2 80 2 -1 9 30 80 50 2.5 100 0 11.25 10 40 V mA dB K Vrms dB K dB dB 70 1 SHENZHEN TITAN M ICRO ELECTRONI CS CO., LTD. Gstep Ein Riv Crange Avmin Avmax Astep Ea Et Vdc 0~ Crange Sstep Ea Amute Vdc 0 1 Gb Bstep Rb 1 Gt Tstep Vocl ... |
 TECH MOS |
N-Channel High Density Trench MOSFET TECH MOS Technology. N-Channel High Density Trench MOSFET TM2314FN PRODUCT SUMMARY VDSS ID 5.4 20V 4.3 46 @ VGS = 2.5V RDS(on) (m-ohm) Max 30 @ VGS = 4.5V FEATURES ●Super high dense cell trench design for low RDS(on). ●Rugged and reliable. ●Surface Mount package. D SOT-23-3L D S G S G ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TA = 25 °C -Pulse b Drain-Source Diode Forward Current Maximum Power Dissipation a a a Symbol VDS VGS ID IDM IS PD TJ,TSTG Limit 20 ± 12 5.4 21.5 1.7 1.25 0.75 - 55 to 150 Unit V V A A A W °C TA=25°C TA=75°C Operating Junction and Storage Temperature Range THERMA... |
 AVIC |
TFT LCD Preliminary Release Q/S1010-2011 Editor Stephen Sun The information contained herein is the exclusive property of SHANGHAI AVIC OPTOELECTRONICS Corporation, and shall not be distributed, reproduced, or disclosed in whole or in part without prior written permission of SHANGHAI AVIC OPTOELECTRONICS Corporation. Page 3 of 28 One step solution for LCD / PDP / OLED panel application: Datasheet, inventory and accessory! www.panelook.com Global LCD Panel Exchange Center www.panelook.com SHANGHAI AVIC OPTOELECTRONICS 1. OUTLINE Q/S1010-2011 1.1 STRUCTURE AND PRINCIPLE TM236VFS01-00 module is composed of the amorphous silicon thin film transistor liquid crystal display (a-Si TFT LCD) panel str... |