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| Datasheet |
 2SA1610 Datasheet - 271.94KB |
| Part Number | Description |
|---|---|
 Shindengen Electric Mfg.Co.Ltd |
Switching Power Transistor SHINDENGEN Switching Power Transistor LSV Series 2SA1600 (TP12T4) -12A PNP OUTLINE DIMENSIONS Case : ITO-220 Unit : mm RATINGS •œAbsolute Maximum Ratings Item Symbol Conditions Ratings Unit Storage TemperatureTstg -55•`150 •Ž Junction Temperature Tj 150 •Ž Collector to Base Voltage V -60 V CBO Collector to Emitter Voltage V -40 V CEO Emitter to Base Voltage V -7 V EBO Collector Current DC I -12 A C Collector Current Peak I -24 A CP Base Current DC I -2 A B Base Current Peak I -3 A BP Total Transistor Dissipation P 30 W T Tc = 25•Ž Dielectric Strength Vdis Terminal to case, AC 12minute kV Mounting Torque TOR (Recommended torque 0.5 : 0.3N¥m) N¥m •œElectrical Characteristics (Tc=25•Ž) Cond... |
 SavantIC |
SILICON POWER TRANSISTOR ·With ITO-220 package ·Switching power transistor ·Low collector saturation voltage PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (ITO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Base current-Peak Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -60 -40 -7 -12 -24 -2 -3 30 150 -55~150 UNIT V V V A A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 4.16 UNIT... |
 Inchange Semiconductor |
POWER TRANSISTOR ·With ITO-220 package ·Switching power transistor ·Low collector saturation voltage PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (ITO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Base current-Peak Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -60 -40 -7 -12 -24 -2 -3 30 150 -55~150 UNIT V V V A A A A W ℃ ℃ IBM PT Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case M... |
Shindengen Electric Mfg.Co.Ltd |
Switching Power Transistor SHINDENGEN Switching Power Transistor LSV Series 2SA1601 (TP15T4) -15A PNP OUTLINE DIMENSIONS Case : ITO-220 Unit : mm RATINGS •œAbsolute Maximum Ratings Item Symbol Conditions Ratings Unit Storage TemperatureTstg -55•`150 •Ž Junction Temperature Tj 150 •Ž Collector to Base Voltage V -60 V CBO Collector to Emitter Voltage V -40 V CEO Emitter to Base Voltage V -7 V EBO Collector Current DC I -15 A C Collector Current Peak I -30 A CP Base Current DC I -2 A B Base Current Peak I -3 A BP Total Transistor Dissipation P 45 W T Tc = 25•Ž Dielectric Strength Vdis Terminal to case, AC 12minute kV Mounting Torque TOR (Recommended torque 0.5 : 0.3N¥m) N¥m •œElectrical Characteristics (Tc=25•Ž) Cond... |
SavantIC |
SILICON POWER TRANSISTOR ·With ITO-220 package ·Switching power transistor ·Low collector saturation voltage PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (ITO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Base current-Peak Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -60 -40 -7 -15 -30 -2 -3 45 150 -55~150 UNIT V V V A A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 2.77 UNIT... |
Inchange Semiconductor |
POWER TRANSISTOR ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -40(V)(Min.) ·Low Collector Saturation Voltage :VCE(sat)= -0.3(V)(Max.)@IC= -7.5A ·Large Current Capability-IC= -15A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for mid-switching applications, and is ideal for use as a ramp driver. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -15 A ICM Collector Current-Peak -30 A IB Base Current-Continuous -2 A IBM Base Current-Peak PC Total Power Dissipation @ TC=2... |
 Isahaya Electronics |
Silicon PNP Transistor Item ‚ˆ‚e‚d•@ Item ‚d ‚e ‚f 150~300 250~500 400~800 ISAHAYA •@ ELECTRONICS•@ CORPORATION Free Datasheet http://www.datasheet4u.com/ Free Datasheet http://www.datasheet4u.com/ Free Datasheet http://www.datasheet4u.com/ Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your cir... |
 Isahaya Electronics Corporation |
Silicon PNP Transistor < SMALL-SIGNAL TRANSISTOR > 2SA1235A 2SA1602A 2SA1993 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(Super mini type) FEATURE ・ Super mini package for easy mounting OUTLINE DRAWING 2SA1602A 2.1 0.425 1.25 0.425 0.5 Unit：ｍｍ 2SA1235A 2.5 1.5 0.5 ・Excellent linearity of DC forward gain ・Small collector to emitter saturation voltage VCE(sat)=-0.3V max 0.65 0.95 APPLICATION For Hybrid IC,small type machine low frequency voltageAmplify application 2.0 1.3 0.3 ① ② ③ ① ② ③ 2.9 1.90 0.65 0.9 1.1 0.95 0.15 0.7 0.8 JEITA：SC-70 JEDEC：－ TERMINAL CONNECTER ①：BASE ②：EMITTER ③：COLLECTOR 0～0.1 JEITA：SC-59 JEDEC：TO-236 TERMINAL CONNECTER ①：BASE ②：EMITTER ③：COLLECTOR 2S... |
Isahaya Electronics |
Silicon PNP Transistor Item ‚ˆ‚e‚d•@ Item ‚p ‚q ‚r •@‚s 120~270 180~390 270~560 390~820 ISAHAYA •@ ELECTRONICS•@ CORPORATION Free Datasheet http://www.datasheet4u.com/ Free Datasheet http://www.datasheet4u.com/ Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate ... |
Isahaya Electronics |
Silicon PNP Transistor 2SA1603A is a super mini package resin sealed silicon PNP epitaxial transistor, It is designed for low frequency voltage application. . 0.425 2.1 1.25 0.425 OUTLINE DRAWING Unit：ｍｍ 0.65 ① ② ③ ● Small collector to emitter saturation voltage. VCE(sat)=-0.3V max ●Excellent linearity of DC forward gain. ●Super mini package for easy mounting 0.9 0.7 0.15 0.65 FEATURE 2.0 1.30 APPLICATION For Hybrid IC,small type machine low frequency voltage Amplify application. JEITA：SC-70 TERMINAL CONNECTER ①：BASE Ratings -60 -50 -6 -150 200 ＋150 -55～＋150 Unit V V V mA mW ℃ ℃ MAXIMUM RATINGS（Ta=25℃） Symbol VCBO VCEO VEBO I O Parameter Collector to Base voltage Collector to Emitter voltage Emitter to... |
 Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors Ordering number:EN2535 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1606/2SC4159 High-Voltage Switching, AF 100W Driver Applications Applications · High-voltage switching, AF power amplifier, 100W output predrivers. Package Dimensions unit:mm 2041 [2SA1606/2SC4159] Features · Micaless package facilitating mounting. ( ) : 2SA1606 E : Emitter C : Collector B : Base SANYO : TO-220ML Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Rating... |
Inchange Semiconductor |
Silicon PNP Power Transistor ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V (Min) ·Large Current Capacity ·Complement to Type 2SC4159 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-voltage switching, AF power amplifier, 100W output predrivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -6.0 V IC Collector Current-Continuous -1.5 A ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -3 A 15 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： www.i... |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors Ordering number:EN2479A Features · Fast switching speed. · High gain-bandwidth product. · Low saturation voltage. PNP/NPN Epitaxial Planar Silicon Transistors 2SA1607/2SC4168 High-Speed Switching Applications Package Dimensions unit:mm 2018A [2SA1607/2SC4168] ( ) : 2SA1607 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Collector Cutoff Current Emitter Cutoff Current DC Cu... |
 Kexin |
PNP Transistors SMD Type TransistIoCrs Features Fast switching speed. High gain-bandwidth product. Low saturation voltage. ● Complementary to 2SC4168 PNP Transistors 2SA1607 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 +0.12.4 -0.1 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 +0.10.97 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Base current Collector dissipation Junction temperature Storage temperature Electrical Characteristics Ta = 25 Parameter Collector- base breakdown voltage Collector- emitter breakdown voltage Emitter - base breakdown voltage Col... |
 NEC |
PNP Transistor ... |
Kexin |
Transistor SMD Type PNP Silicon Epitaxia 2SA1608 Transistors IC Features High fT: fT=400MHz. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating -60 -40 -5 -500 150 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain * Collector-emitter saturation voltage * Base-emitter saturation voltage * Gain bandwidth product Output capacitance Turn-on time Storage time Turn-off time *. PW 350ìs,duty cycle 2% ... |