| Description | The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. Thi... |
| Features |
• Short Circuit Rated - 10µs @ 125°C, V GE = 15V Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency (1 to 10kHz). • Q1 Short Circuit Rated Fast IGBT 1,2 4 5 D1 6,7 Product Summary Output Current in a Typical 5.0 kHz Motor Drive 14 ARMS with T C = 90°C, T J = 125°C, Supply Voltage 360Vdc, Power Factor 0.8, Modulation Depth 80%. 9 Q2 D2 11,12 Description The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate... |
| Datasheet |
 CPU165MM Datasheet - 94.81KB |
| Part Number | Description |
|---|---|
 International Rectifier |
IGBT SIP MODULE Fast IGBT The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium. IMS-1 Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE VISOL PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-... |
International Rectifier |
IGBT SIP MODULE Short Circuit Rated UltraFast IGBT The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to power applications and where space is at a premium. These new short circuit rated devices are especially suited for motor control and other totem-pole applications requiring short circuit withstand capability. IMS-1 Units V... |
International Rectifier |
IGBT SIP MODULE Ultra-Fast IGBT The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium. IMS-1 Absolute Maximum Ratings Parameter VCES IC @ T C = 25°C IC @ T C = 100°C ICM ILM IF @ T C = 100°C IFM VGE VISOL PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Colle... |