| Description | ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max. Op... |
| Features |
·Typical RDS(on) = 0.022 ·Avalanche Rugged Technology ·100% Avalanche Tested ·Low Gate Charge ·High Current Capability DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max. Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 50 V ±20 V 50 A 200 A 150 W 175 ℃ -65~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-... |
| Datasheet |
 IRFZ40 Datasheet - 55.49KB |
| Part Number | Description |
|---|---|
 International Rectifier |
HEXFET Power MOSFET PD - 90440A IRFZ10 D G D S TO-220AB www.DataSheet4U.com G D S Gate Drain Source www.irf.com 1 06/24/05 ww.DataSheet4U.com IRFZ10 2 www.irf.com IRFZ10 www.irf.com 3 IRFZ10 4 www.irf.com IRFZ10 www.irf.com 5 IRFZ10 6 www.irf.com IRFZ10 Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + + - • dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test + - * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D= P.W. Period VGS=10V D.U.T. ISD Waveform Reverse Recovery C... |
 Vishay |
Power MOSFET Third Generation Power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. TO-220AB IRFZ10PbF SiHFZ10-E3 IRFZ10 SiHFZ10 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage VDS VGS Continuous Drain Current TC = 25 °C VGS at 10 V TC = 100 °C ID Pulsed Drain ... |
 Fairchild Semiconductor |
Power MOSFET $GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 60V ♦ Lower RDS(ON): 0.097Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed (1) Gate-to-Source Voltage Single Pulsed Avalanche Energy (2) Avalanche Current (1) Repetitive Avalanche Energy (1) Peak Diode Recovery dv/dt (3) Total Power Dissipation (TC=25°C) Linear ... |
International Rectifier |
HEXFET Power MOSFET ... |
Vishay |
Power MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. TO-220AB IRFZ14PbF SiHFZ14-E3 IRFZ14 SiHFZ14 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltagef Gate-Source Voltagef Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor VGS at 10 V TC =... |
 Samsung |
Power MOSFET )($785(6 Qýýý$YDODQFKHýý5XJJHGýý7HFKQRORJ\ Qýýý5XJJHGýý*DWHýý2[LGHýý7HFKQRORJ\ý Qýýý/RZHUýý,QSXWýý&DSDFLWDQFH Qýýý,PSURYHGýý*DWHýý&KDUJH Qýýý([WHQGHGýý6DIHýý2SHUDWLQJýý$UHD Qýýýìæèýý2SHUDWLQJýý7HPSHUDWXUH Qýýý/RZHUýý/HDNDJHýý&XUUHQWýýãýýìíýP$ýõ0D[ïôýý#ýý9'6ý ýçí9 Qýýý/RZHUýý5'6õ21ôýýãýýíïíäæý:ýõ7\Sïô $EVROXWHýý0D[LPXPýý5DWLQJV 6\PERO 9'66 ,' ,'0 9*6 ($6 ,$5 ($5 GYîGW 3' 7-ýýñý767* 7/ &KDUDFWHULVWLF 'UDLQðWRð6RXUFHý9ROWDJH &RQWLQXRXVýý'UDLQýý&XUUHQWýýõ7& ëèR&ô &RQWLQXRXVýý'UDLQýý&XUUHQWýýõ7& ìííR&ô 'UDLQýý&XUUHQWð3XOVHGýýýýýýýýýýýýýýýýýýýýýýýýýýýýýý2ì *DWHðWRð6RXUFHýý9ROWDJH 6LQJOHýý3XOVHGýý$YDODQFKHýý(QHUJ\ýýýýýýýýýý2ë $YDODQFKHýý&XUUHQW... |
International Rectifier |
Advanced Process Technology / Surface Mount Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance... |
Vishay |
Power MOSFET Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extermely efficient reliabel deviece for use in a wide variety of applications. The D2PAK is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to... |
International Rectifier |
Advanced Process Technology / Surface Mount Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance... |
Vishay |
Power MOSFET Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extermely efficient reliabel deviece for use in a wide variety of applications. The D2PAK is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to... |
International Rectifier |
(IRFZ20 / IRFZ22) HEXFET TRANSISTORS www.DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com DataSheet 4 U .com ... |
 STMicroelectronics |
N-Channel MOSFET IRFZ20/FI IRFZ22/FI N - CHANNEL ENHANCEMENT MODE POWER MaS TRANSISTORS TYPE IRFZ20 IRFZ20FI IRFZ22 IRFZ20FI Voss 50 V 50 V 50 V 50 V ROs(on) 0.1 n 0.1 n 0.12 n 0.12 n 10 15 A 12.5 A 14 A 12 A • N-CHANNEL POWER MOS TRANSISTORS • VERY LOW Ros (on) • LOW DRIVE ENERGY FOR EASY DRIVE • COST EFFECTIVE INDUSTRIAL APPLICATIONS: e AUTOMOTIVE POWER ACTUATORS e MOTOR CONTROLS e INVERTERS N - channel enhancement mode POWER MOS field effect transistors. Easy drive and very fast switching times make these POWER MOS transistors ideal for high speed switching circuits applications such as power actuators driving, motor drive including brushless motors, hydraulic actuator and many other in automotive an... |
 Art Chip |
0.1 Ohm HEXFET IRFZ20/IRFZ22 HEXFET ® TRANSISTORS 50 Volt, 0.1 Ohm HEXFET TO-220AB Plastic Package The HEXFET technology has expanded its product base to serve the low voltage, very low RDS(on) MOSFET transistor requirements, International Rectifier’s highly efficient geometry and unique processing of the HEXFET have been combined to create the lowest on resistance per device performance, in addition to this feature all HEXFETs have documented reliability and parts per million quality I The HEXFET transistors also offer all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling, and temperature stability of the electrical parameters. They are well s... |
Vishay |
Power MOSFET The technology has expanded its product base to serve the low voltage, very low RDS(on) MOSFET transistor requirements. Vishay’s highly efficient geometry and unique processing have been combined to create the lowest on resistance per device performance. In addition to this feature all have documented reliability and parts per million quality! The transistor also offer all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling, and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, ... |
International Rectifier |
(IRFZ20 / IRFZ22) HEXFET TRANSISTORS www.DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com DataSheet 4 U .com ... |
STMicroelectronics |
N-Channel MOSFET IRFZ20/FI IRFZ22/FI N - CHANNEL ENHANCEMENT MODE POWER MaS TRANSISTORS TYPE IRFZ20 IRFZ20FI IRFZ22 IRFZ20FI Voss 50 V 50 V 50 V 50 V ROs(on) 0.1 n 0.1 n 0.12 n 0.12 n 10 15 A 12.5 A 14 A 12 A • N-CHANNEL POWER MOS TRANSISTORS • VERY LOW Ros (on) • LOW DRIVE ENERGY FOR EASY DRIVE • COST EFFECTIVE INDUSTRIAL APPLICATIONS: e AUTOMOTIVE POWER ACTUATORS e MOTOR CONTROLS e INVERTERS N - channel enhancement mode POWER MOS field effect transistors. Easy drive and very fast switching times make these POWER MOS transistors ideal for high speed switching circuits applications such as power actuators driving, motor drive including brushless motors, hydraulic actuator and many other in automotive an... |
Art Chip |
0.1 Ohm HEXFET IRFZ20/IRFZ22 HEXFET ® TRANSISTORS 50 Volt, 0.1 Ohm HEXFET TO-220AB Plastic Package The HEXFET technology has expanded its product base to serve the low voltage, very low RDS(on) MOSFET transistor requirements, International Rectifier’s highly efficient geometry and unique processing of the HEXFET have been combined to create the lowest on resistance per device performance, in addition to this feature all HEXFETs have documented reliability and parts per million quality I The HEXFET transistors also offer all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling, and temperature stability of the electrical parameters. They are well s... |