| Description | NPN 3DD13001 A1 ○R 3DD13001 A1 NPN ， ， ， 、 。 ● ● ● ● ● ● ● ● VCEO IC Ptot （Ta=25℃） 400 0.25 0.8 V A W TO-92 -10℃～40℃ 1 265℃ ＜85％ C B ，Ta= 25℃ - - - （tp＜5ms） （tp＜5ms） ... |
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| Datasheet |
 3DD13001A1 Datasheet - 182.15KB |
| Part Number | Description |
|---|---|
 GME |
High Voltage Fast Switching NPN Power Transistor Production specification High Voltage Fast Switching NPN Power Transistor 3DD13001 FEATURES PC=350mW(Mounted on ceramic substrate). Pb High speed switching. Lead-free Small flat package. APPLICATIONS High voltage switch mode application. ORDERING INFORMATION Type No. Marking 3DD13001 13001 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO VCEO VEBO IC PC Tj,Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature 600 V 400 V 7V 0.2 A 350 mW -55 to +150 ℃ C186 Rev.A www.gmesemi.com 1 Productio... |
 Jiangsu Changjiang Electronics |
TRANSISTOR JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13001 TRANSISTOR£¨NPN £© TO¡ª 92 FEATURES Power dissipation PCM : 1.25 W£¨ Tamb=25¡æ£© Collector current www.DataSheet4U.com ICM : 0.2 A Collector-base voltage V(BR)CBO : 600 V Operating and storage junction temperature range T J £¬ T stg: -55¡æto +150¡æ ELECTRICAL CHARACTERISTICS£¨ Tamb=25¡æ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE£¨ 1£© DC current gain hFE£¨ 2£© Collector-emitter saturation voltage Ba... |
 TRANSYS Electronics |
Plastic-Encapsulated Transistors Transys Electronics L I M I T E D TO-251 Plastic-Encapsulated Transistors 3DD13001 FEATURES Power dissipation PCM: 1.2 W (Tamb=25℃) 1. BASE 2. COLLECTOR 3EMITTER TRANSISTOR (NPN) TO-251 DataSheet4U.com Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 600 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter ... |
 SeCoS |
NPN Transistor 3DD13001 Elektronische Bauelemente 0.2A , 600V NPN Plastic-Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Power switching applications A TO-92 D B CLASSIFICATION OF hFE(1) Product-Rank Range 3DD13001-A 17~23 3DD13001-B 20~26 G H E C F 3 Emitter J 1Base 2Collector 3Emitter Millimeter Min. Max. 0.30 0.51 1.27 TYP. 1.10 1.40 2.42 2.66 0.36 0.76 1 Base Collector REF. A B C D E 2 Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 REF. F G H J K ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - C... |
 Kexin |
NPN Transistors SMD Type NPN Transistors 3DD13001 Transistors ■ Features ● Collector-emitter Voltage: V(BR)CEO=400V ● Collector Current: IC=0.2A 1.70 0.1 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 600 400 7 0.2 0.5 150 -55 to 150 Unit V V V A W ℃ ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base Breakdown voltage Collector-base cut-off current Emitter cut-off curr... |
 WEJ |
NPN Transistor ... |
 JILIN SINO-MICROELECTRONICS |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR of Changes （Appendix）：（Revision History） New Rev. 200906C 200910D ：200910D 5/5 Free Datasheet http://www.datasheet4u.com/ ... |
 JCST |
TO-92 Plastic-Encapsulate Transistors JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13001B TRANSISTOR (NPN) FEATURE · power switching applications TO-92 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector -Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7V IC Collector Current -Continuous 0.2 A PC Collector Power Dissipation 0.75 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ 2. COLLECTOR 3. EMITTER ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base break... |
JILIN SINO-MICROELECTRONICS |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR of Changes 、 （Appendix）：（Revision History） New Rev. 200905C 200910D ：200910D 5/5 Free Datasheet http://www.datasheet4u.com/ ... |
 Huajing Microelectronics |
NPN Transistor ... |
JILIN SINO-MICROELECTRONICS |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR of Changes 、 （Appendix）：（Revision History） New Rev. 200905C 200910D ：200910D 5/5 Free Datasheet http://www.datasheet4u.com/ ... |