| Description | TO-92 NPN 。Silicon NPN transistor in a TO-92 Plastic Package. / Features ，。 High Voltage Capability High Speed Switching. / Applications 、、。 High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. / Equivalent Circuit / Pinning 1 23 PI... |
| Features |
，。 High Voltage Capability High Speed Switching.
/ Applications
、、。 High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc.
/ Equivalent Circuit
/ Pinning
1 23
PIN1：Base
PIN 2：Collector
PIN 3：Emitter
/ hFE Classifications & Marking 。See Marking Instructions.
http://www.fsbrec.com
1/6
MJE13002F1
Rev.E Mar.-2016
/ Absolute Maximum Ratings(Ta=25℃)
Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction Temperature Storage Tempera...
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| Datasheet |
 MJE13002F1 Datasheet - 787.16KB |
| Part Number | Description |
|---|---|
 Motorola |
1.5 AMPERE NPN SILICON POWER TRANSISTORS MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE13002/D Designer's SWITCHMODE Series NPN Silicon Power Transistors These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. SPECIFICATION FEATURES: • Reverse Biased SOA with Inductive Loads @ TC = 100_C • Inductive Switching Matrix 0.5 to 1.5 Amp, 25 and 100_C . . . tc @ 1 A, 100_C is 290 ns (Typ). • 700 V Blocking Capability • SOA and Switching Applications Information. ™ Data Sheet MJE1... |
 SEMTECH |
NPN Silicon Power Transistors MJE13002 / MJE13003 NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE applications such as Switching Regulator’s, Inverters, Motor Controls, Solenoid / Relay drivers and Deflection circuits. SPECIFICATION FEATURES: • Reverse Biased SOA with Inductive Loads TC=100oC • Inductive Switching Matrix 0.5 to 1.5 Amp,25 and 100oC • tc @ 1A, 100oC is 290 ns (Typ). • 700V Blocking Capability • SOA and Switching Applications Information. Absolute Maximum Ratings (T a=25oC) TO-225AA Package Symbol Value MJE13002 MJE13003 Collector Emitter Volta... |
 SEMIWELL |
High Voltage Fast-Switching NPN Power Transistor This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum Ratings Symbol VCES VCEO VEBO IC ICP IB IBM PC TJ TSTG Parameter Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector pulse Current Base Current Base Peak Current Total Dissipation at Tc = 25℃ Total Dissipation at Ta = 25℃ Operation Junction Temperature Storage Temperature Tc: Case temperature (good cooling) Ta: Ambient temperature (without heat sink) Test Conditions VBE = 0 IB = 0 IC = 0 tP = 5ms Value 600 400 9.0 1.25 2.5 12 0.8 - 40 ~ 150 - 40 ~ 150 Units V V V A A A A W ℃ ℃ TS... |
 UTC |
NPN SILICON POWER TRANSISTOR The UTC MJE13002 designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly suited for 115 and 220V switchmode applications such as switching regulator’s,inverters, DC-DC converter, Motor control, Solenoid/Relay drivers and deflection circuits. FEATURES *Collector-Emitter Sustaining Voltage: VCEO (sus)=300V. *Collector-Emitter Saturation Voltage: VCE(sat)=1.0V(Max.) @IC=1.0A, IB =0.25A *Switch Time- tf =0.7μs(Max.) @IC=1.0A. ORDERING INFORMATION Ordering Number Lead Free Halogen Free MJE13002L-x-T92-B MJE13002G-x-T92-B MJE13002L-x-T92-K MJE13002G-x-T92-K MJE13002L-x-T92-A-B MJE13002G-x-T92-A-B MJE13002L-x-T92-A-K MJE13002G-x-T92-A-K ... |
 MCC |
NPN Silicon Plastic-Encapsulate Transistor MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# MJE13002 • • • • • • • Features Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Capable of 1.25Watts of Power Dissipation. Collector-current 1.0A Collector-base Voltage 600V Operating and storage junction temperature range: -55OC to +150 OC NPN Silicon Plastic-Encapsulate Transistor A K N Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter Collector-Emitter Breakdown Voltage (IC... |
 Inchange Semiconductor |
Silicon NPN Power Transistors ¡¤With TO-126 package ¡¤High voltage ,high speed APPLICATIONS ¡¤Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION MJE13002 ¡¤ Absolute maximum ratings (Tc=25¡æ ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM IE IEM PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current Base current-Peak Emitter current Emitter current-Peak Total power dissipation Junction temperature Storage temperature TC=25¡æ CONDITIONS Open emi... |
 CDIL |
(MJE13002 / MJE13003) NPN EPITAXIAL SILICON POWER TRANSISTORS Collector Emitter Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Continuous Peak Base Current Continuous Peak Emitter Current Continuous Peak Total Power Dissipation @ Ta=25ºC Derate Above 25ºC Total Power Dissipation @ TC=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to Case Rth (j-c) 3.12 89 275 ºC/W ºC/W ºC Rth (j-a) Junction to Ambient in free air Maximum Load Temperature for TL Soldering Purposes 1/8" from Case for 5 Seconds *Pulse Test: Pulse Width=5ms, Duty Cycle<10% ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Sustaining Voltage **VCEO... |
 SavantIC |
Silicon NPN Power Transistors ·With TO-126 package ·High voltage ,high speed APPLICATIONS ·Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER CONDITIONS VCBO VCEO VEBO IC ICM IB IBM IE IEM PD Tj Tstg Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current Base current-Peak Emitter current Emitter current-Peak Total power dissipation Junction temperature Storage temperature Open emitter Open base... |
UTC |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR The UTC MJE13002-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly suited for 115 and 220V switchmode applications such as switching regulator’s,inverters, DC-DC converter, Motor control, Solenoid/Relay drivers and deflection circuits. FEATURES *Collector-Emitter Sustaining Voltage: VCEO (sus)=300V. *Collector-Emitter Saturation Voltage: VCE(sat)=1.0V(Max.) @IC=1.0A, IB =0.25A *Switch Time- tf =0.7μs(Max.) @Ic=1.0A. ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package MJE13002L-E-x-T6S-K MJE13002G-E-x-T6S-K TO-126S MJE13002L-E-x-T92-B MJE13002G-E-x-T92-B TO-92 MJE13002L-E-x-T92-K MJE13002G-E-x-T92-K TO-92... |
 Wing Shing Computer Components |
Silicon NPN Triple Diffused Transistor MJE13002A APPLICATION: ELECTRONIC TRANSFORMERS , POWER SWICHING CIRCUIT MAXIMUM RATINGS (Tc=25⊥) CHA RA CTERISTIC Co llecto r-Bas e Vo ltag e Co llecto r-Emitter Vo ltag e Emitter-Bas e Vo ltag e Co llecto r Cu rren t Co llecto r Po wer Dis s ip atio n Ju n ctio n Temp eratu re Sto rag e Temp eratu re Ran g e SYM BOL VCBO RA TING SILICON NPN TRIPLE DIFFUSED MESA TYPE UNIT V V V A W V CE O V E BO Ic Pc T(vj) Tstg 600 400 9 1 20 150 -55~+150 ℃ ℃ TO-126 ELECTRICAL CHARACTERISTICS (Tc=25⊥) CH A RA CT ERIST IC Co lle c to r-Emitte r Su s ta in in g Vo lta g e Co lle c to r-Ba s e Bre a kd o w n Vo lta g e Emitte r-Ba s e Bre a kd o w n Vo lta g e Co lle c to r-Ba s e Cu t o ff c u rre n t... |
 BLUE ROCKET ELECTRONICS |
Silicon NPN transistor TO-92 NPN 。Silicon NPN transistor in a TO-92 Plastic Package. / Features ，。 High Voltage Capability High Speed Switching. / Applications ,,。 High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. / Equivalent Circuit / Pinning 1 23 PIN1：Base PIN 2：Collector PIN 3：Emitter / hFE Classifications & Marking 。See Marking Instructions. http://www.fsbrec.com 1/6 MJE13002DE1 Rev.E Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction Temperature Storage Temperature Range S... |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor ... |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor ... |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor TO-92LM NPN 。Silicon NPN transistor in a TO-92LM Plastic Package. / Features ，。 High Voltage Capability High Speed Switching. / Applications 、、。 High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. / Equivalent Circuit / Pinning 1 23 PIN1： Base PIN 2：Collector PIN 3：Emitter / hFE Classifications & Marking 。See Marking Instructions. http://www.fsbrec.com 1/6 MJE13002E2 Rev.E Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction Temperature Storage Temperature Range ... |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor ... |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor TO-126(R) NPN 。Silicon NPN transistor in a TO-126(R) Plastic Package. / Features ，。 High Voltage Capability High Speed Switching. / Applications 、、。 High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. / Equivalent Circuit / Pinning 123 PIN1：Base PIN 2：Collector PIN 3： Emitter / hFE Classifications & Marking See Marking Instructions http://www.fsbrec.com 1/6 MJE13002F5 Rev.E Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Collector Power Dissipation Junction Temperature ... |