| Description | BUZ 100 SL SPP70N05L SIPMOS ® Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS 55 V ID 70 A RDS(on) 0.018 Ω Package Ordering Code BUZ 100 SL TO-220 AB Q6... |
| Features |
istance, junction - case Thermal resistance, junction - ambient IEC climatic category, DIN IEC 68-1
Tj Tstg RthJC RthJA
-55 ... + 175 -55 ... + 175
°C
≤ 0.88 ≤ 62
55 / 175 / 56
K/W
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit
Drain- source breakdown voltage
V GS = 0 V, ID = 0.25 mA, Tj = 25 °C
V (BR)DSS
V 55 -
Gate threshold voltage
V GS=V DS, ID = 130 µA
V GS(th)
1.2
IDSS
1.6
2 µA
Zero gate voltage drain current
V DS = 50 V, V GS = 0 V, Tj = -40 °C V DS = 50 V, V GS = 0 V, Tj = 25 °C V DS...
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| Datasheet |
 BUZ100SL Datasheet - 123.26KB |
| Part Number | Description |
|---|---|
 Siemens Semiconductor Group |
Power Transistor BUZ 100 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Ultra low on-resistance • 175°C operating temperature • also in TO-220 SMD available Pin 1 G Type BUZ 100 Pin 2 D Pin 3 S VDS 50 V ID 60 A RDS(on) 0.018 Ω Package TO-220 AB Ordering Code C67078-S1348-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 60 Unit A ID IDpuls 240 TC = 101 °C Pulsed drain current TC = 25 °C Avalanche energy, single pulse EAS 250 dv/dt 6 mJ ID = 60 A, VDD = 25 V, RGS = 25 Ω L = 70 µH, Tj = 25 °C Reverse diode dv/dt kV/µs IS = 60 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C Gate source voltage Power dissipation VGS Ptot ± 20 250 V W ... |
 INCHANGE |
N-Channel MOSFET isc N-Channel Mosfet Transistor ·FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 0.018Ω(Max) ·Ultra low on-resistance ·Fast Switching ·175℃ operating temperature ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High current , high speed switching ·Solenoid and relay drivers ·DC-DC & DC-AC converters ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 50 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=101℃ 60 A IDM Drain Current-Single Plused 240 A Ptot Total Dissipation@TC=25℃ 250 W Tj Max. Operating Junction Temperature -55~175 ℃ Tstg Storage Tempe... |
Siemens Semiconductor Group |
Power Transistor BUZ 100L SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/dt rated • Ultra low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Pin 1 G Pin 2 D Pin 3 S Type BUZ 100L VDS 50 V ID 60 A RDS(on) 0.018 Ω Package TO-220 AB Ordering Code C67078-S1354-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 60 Unit A ID IDpuls 240 TC = 101 °C Pulsed drain current TC = 25 °C Avalanche energy, single pulse EAS 250 dv/dt 6 mJ ID = 60 A, VDD = 25 V, RGS = 25 Ω L = 70 µH, Tj = 25 °C Reverse diode dv/dt kV/µs IS = 60 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C Gate source voltage Gate-source peak voltage,... |
Siemens Semiconductor Group |
Power Transistor BUZ 100 S SPP77N05 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS 55 V ID 77 A RDS(on) 0.015 Ω Package Ordering Code BUZ 100 S TO-220 AB Q67040-S4001-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 25 °C TC = 100 °C ID A 77 55 Pulsed drain current TC = 25 °C IDpuls 308 E AS Avalanche energy, single pulse ID = 77 A, V DD = 25 V, RGS = 25 Ω L = 128 µH, Tj = 25 °C mJ 380 IAR E AR Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Reverse diode dv/dt IS = 77 A, VDS = 40 V, diF/dt = 200 A... |
Siemens Semiconductor Group |
Power Transistor Preliminary data BUZ 100SL-4 SIPMOS ® Power Transistor • Quad-channel • Enhancement mode • Logic level • Avalanche-rated • dv/dt rated Type BUZ 100SL-4 VDS 55 V ID 7.4 A RDS(on) 0.023 Ω Package P-DSO-28 Ordering Code C67078-S. . . .- . . Maximum Ratings Parameter Continuous drain current one channel active Symbol Values 7.4 Unit A ID IDpuls 29.6 TA = 25 °C Pulsed drain current one channel active TA = 25 °C Avalanche energy, single pulse EAS 380 dv/dt 6 mJ ID = 7.4 A, VDD = 25 V, RGS = 25 Ω L = 13.8 mH, Tj = 25 °C Reverse diode dv/dt kV/µs IS = 7.4 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C Gate source voltage Power dissipation ,one channel active VGS Ptot ± 14 2.4 V ... |