| Description | isc N-Channel Mosfet Transistor ·FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 0.018Ω(Max) ·Ultra low on-resistance ·Fast Switching ·175℃ operating temperature ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High current , high speed switc... |
| Features |
·Static Drain-Source On-Resistance : RDS(on) = 0.018Ω(Max) ·Ultra low on-resistance ·Fast Switching ·175℃ operating temperature ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High current , high speed switching ·Solenoid and relay drivers ·DC-DC & DC-AC converters ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 50 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=101℃ 60 A IDM Drain Current-Single Plused 240 A Ptot Total Dissipation@TC=25℃ 250 W Tj Max. Oper... |
| Datasheet |
 BUZ100 Datasheet - 225.38KB |
| Part Number | Description |
|---|---|
 STMicroelectronics |
N-Channel Power MOSFET ® BUZ10 N - CHANNEL 50V - 0.06Ω - 23A TO-220 STripFET™ MOSFET T YPE BUZ 10 s s s s s V DSS 50 V R DS(o n) < 0.07 Ω ID 23 A TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE 3 1 2 APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) s TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID IDM P tot Ts tg Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Cu... |
 Siemens Semiconductor Group |
Power Transistor BUZ 10 Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 10 VDS 50 V ID 23 A RDS(on) 0.07 Ω Package TO-220 AB Ordering Code C67078-S1300-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 23 Unit A ID IDpuls 92 TC = 26 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 23 1.3 mJ ID = 23 A, VDD = 25 V, RGS = 25 Ω L = 15.1 µH, Tj = 25 °C Gate source voltage Power dissipation 8 VGS Ptot ± 20 75 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip ca... |
 INCHANGE |
N-Channel MOSFET isc N-Channel Mosfet Transistor ·FEATURES ·Drain Current –ID=23A@ TC=25℃ ·Static Drain-Source On-Resistance : RDS(on) = 0.07Ω(Max) ·175℃ operating temperature ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High current , high speed switching ·Solenoid and relay drivers ·DC-DC & DC-AC converters ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 50 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 23 A IDM Drain Current-Single Plused 92 A Ptot Total Dissipation@TC=25℃ 75 W Tj Max. Operating Junction Temperature 175 ℃ Tstg Storag... |
Siemens Semiconductor Group |
Power Transistor BUZ 100 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Ultra low on-resistance • 175°C operating temperature • also in TO-220 SMD available Pin 1 G Type BUZ 100 Pin 2 D Pin 3 S VDS 50 V ID 60 A RDS(on) 0.018 Ω Package TO-220 AB Ordering Code C67078-S1348-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 60 Unit A ID IDpuls 240 TC = 101 °C Pulsed drain current TC = 25 °C Avalanche energy, single pulse EAS 250 dv/dt 6 mJ ID = 60 A, VDD = 25 V, RGS = 25 Ω L = 70 µH, Tj = 25 °C Reverse diode dv/dt kV/µs IS = 60 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C Gate source voltage Power dissipation VGS Ptot ± 20 250 V W ... |
Siemens Semiconductor Group |
Power Transistor BUZ 100L SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/dt rated • Ultra low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Pin 1 G Pin 2 D Pin 3 S Type BUZ 100L VDS 50 V ID 60 A RDS(on) 0.018 Ω Package TO-220 AB Ordering Code C67078-S1354-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 60 Unit A ID IDpuls 240 TC = 101 °C Pulsed drain current TC = 25 °C Avalanche energy, single pulse EAS 250 dv/dt 6 mJ ID = 60 A, VDD = 25 V, RGS = 25 Ω L = 70 µH, Tj = 25 °C Reverse diode dv/dt kV/µs IS = 60 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C Gate source voltage Gate-source peak voltage,... |
Siemens Semiconductor Group |
Power Transistor BUZ 100 S SPP77N05 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS 55 V ID 77 A RDS(on) 0.015 Ω Package Ordering Code BUZ 100 S TO-220 AB Q67040-S4001-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 25 °C TC = 100 °C ID A 77 55 Pulsed drain current TC = 25 °C IDpuls 308 E AS Avalanche energy, single pulse ID = 77 A, V DD = 25 V, RGS = 25 Ω L = 128 µH, Tj = 25 °C mJ 380 IAR E AR Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Reverse diode dv/dt IS = 77 A, VDS = 40 V, diF/dt = 200 A... |
Siemens Semiconductor Group |
Power Transistor BUZ 100 SL SPP70N05L SIPMOS ® Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS 55 V ID 70 A RDS(on) 0.018 Ω Package Ordering Code BUZ 100 SL TO-220 AB Q67040-S4000-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 25 °C TC = 100 °C ID A 70 50 Pulsed drain current TC = 25 °C IDpuls 280 E AS Avalanche energy, single pulse ID = 70 A, V DD = 25 V, RGS = 25 Ω L = 155 µH, Tj = 25 °C mJ 380 IAR E AR Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Reverse diode dv/dt IS = 70 A, VDS = 40 ... |
Siemens Semiconductor Group |
Power Transistor Preliminary data BUZ 100SL-4 SIPMOS ® Power Transistor • Quad-channel • Enhancement mode • Logic level • Avalanche-rated • dv/dt rated Type BUZ 100SL-4 VDS 55 V ID 7.4 A RDS(on) 0.023 Ω Package P-DSO-28 Ordering Code C67078-S. . . .- . . Maximum Ratings Parameter Continuous drain current one channel active Symbol Values 7.4 Unit A ID IDpuls 29.6 TA = 25 °C Pulsed drain current one channel active TA = 25 °C Avalanche energy, single pulse EAS 380 dv/dt 6 mJ ID = 7.4 A, VDD = 25 V, RGS = 25 Ω L = 13.8 mH, Tj = 25 °C Reverse diode dv/dt kV/µs IS = 7.4 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C Gate source voltage Power dissipation ,one channel active VGS Ptot ± 14 2.4 V ... |
 Siemens |
Power Transistor BUZ 101 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type BUZ 101 VDS 50 V ID 29 A RDS(on) 0.06 Ω Maximum Ratings Parameter Continuous drain current TC = 31 °C Pulsed drain current TC = 25 °C Avalanche energy, single pulse ID = 29 A, VDD = 25 V, RGS = 25 Ω L = 83 µH, Tj = 25 °C Reverse diode dv/dt IS = 29 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C Gate source voltage Power dissipation TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category,... |
 Inchange Semiconductor |
N-Channel MOSFET Transistor ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 50 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 29 A IDM Drain Current-Single Pluse 116 A PD Total Dissipation @TC=25℃ 100 W TJ Max. Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 1.5 UNIT ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL ... |
Siemens Semiconductor Group |
Power Transistor BUZ 101L SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/dt rated • Low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Pin 1 G Pin 2 D Pin 3 S Type BUZ 101L VDS 50 V ID 29 A RDS(on) 0.06 Ω Package TO-220 AB Ordering Code C67078-S1355-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 29 Unit A ID IDpuls 116 TC = 31 °C Pulsed drain current TC = 25 °C Avalanche energy, single pulse EAS 70 dv/dt 6 mJ ID = 29 A, VDD = 25 V, RGS = 25 Ω L = 83 µH, Tj = 25 °C Reverse diode dv/dt kV/µs IS = 29 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C Gate source voltage Gate-source peak voltage,aperiodic... |
Siemens Semiconductor Group |
Power Transistor Preliminary data BUZ 101 S SPP22N05 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • 175°C operating temperature Pin 1 G Type BUZ 101 S Pin 2 D Pin 3 S VDS 55 V ID 22 A RDS(on) 0.06 Ω Package TO-220 AB Ordering Code Q67040-S4013-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 22 16 Unit A ID TC = 25 °C TC = 100 °C Pulsed drain current IDpuls 88 TC = 25 °C Avalanche energy, single pulse EAS 90 mJ ID = 22 A, VDD = 25 V, RGS = 25 Ω L = 372 µH, Tj = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Reverse diode dv/dt IAR EAR dv/dt 22 5.5 A mJ kV/µs IS = 22 A, VDS = 40 V, diF/dt ... |
Siemens Semiconductor Group |
Power Transistor BUZ 101 SL SPP20N05L SIPMOS ® Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS 55 V ID 20 A RDS(on) 0.07 Ω Package Ordering Code BUZ 101 SL TO-220 AB Q67040-S4012-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 25 °C TC = 100 °C ID A 20 14 Pulsed drain current TC = 25 °C IDpuls 80 E AS Avalanche energy, single pulse ID = 20 A, V DD = 25 V, RGS = 25 Ω L = 450 µH, Tj = 25 °C mJ 90 IAR E AR Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Reverse diode dv/dt IS = 20 A, VDS = 40 V, ... |
Siemens Semiconductor Group |
Power Transistor Preliminary data BUZ 101SL-4 SIPMOS ® Power Transistor • Quad-channel • Enhancement mode • Logic level • Avalanche-rated • dv/dt rated Type BUZ 101SL-4 VDS 55 V ID 4.1 A RDS(on) 0.075 Ω Package P-DSO-28 Ordering Code C67078-S. . . .- . . Maximum Ratings Parameter Continuous drain current one channel active Symbol Values 4.1 Unit A ID IDpuls 16.4 TA = 25 °C Pulsed drain current one channel active TA = 25 °C Avalanche energy, single pulse EAS 90 dv/dt 6 mJ ID = 4.1 A, VDD = 25 V, RGS = 25 Ω L = 10.7 mH, Tj = 25 °C Reverse diode dv/dt kV/µs IS = 4.1 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C Gate source voltage Power dissipation ,one channel active VGS Ptot ± 14 2.4 V W... |
Siemens Semiconductor Group |
Power Transistor BUZ 102 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Pin 1 G Type BUZ 102 Pin 2 D Pin 3 S VDS 50 V ID 42 A RDS(on) 0.023 Ω Package TO-220 AB Ordering Code C67078-S1351-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 42 Unit A ID IDpuls 168 TC = 111 °C Pulsed drain current TC = 25 °C Avalanche energy, single pulse EAS 180 dv/dt 6 mJ ID = 42 A, VDD = 25 V, RGS = 25 Ω L = 102 µH, Tj = 25 °C Reverse diode dv/dt kV/µs IS = 42 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C Gate source voltage Power dissipation VGS Ptot ± 20 200 V W TC =... |
Siemens Semiconductor Group |
Power Transistor BUZ 102AL SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/dt rated • Low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Pin 1 G Pin 2 D Pin 3 S Type BUZ 102AL VDS 50 V ID 42 A RDS(on) 0.028 Ω Package TO-220 AB Ordering Code C67078-S1356-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 42 Unit A ID IDpuls 168 TC = 97 °C Pulsed drain current TC = 25 °C Avalanche energy, single pulse EAS 180 dv/dt 6 mJ ID = 42 A, VDD = 25 V, RGS = 25 Ω L = 102 µH, Tj = 25 °C Reverse diode dv/dt kV/µs IS = 42 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C Gate source voltage Gate-source peak voltage,aper... |