| Description | BUZ 101 SL SPP20N05L SIPMOS ® Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS 55 V ID 20 A RDS(on) 0.07 Ω Package Ordering Code BUZ 101 SL TO-220 AB Q67... |
| Features |
ance, junction - case Thermal resistance, junction - ambient IEC climatic category, DIN IEC 68-1
Tj Tstg RthJC RthJA
-55 ... + 175 -55 ... + 175
°C
≤ 2.7 ≤ 62
55 / 175 / 56
K/W
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit
Drain- source breakdown voltage
V GS = 0 V, ID = 0.25 mA, Tj = 25 °C
V (BR)DSS
V 55 -
Gate threshold voltage
V GS=V DS, ID = 40 µA
V GS(th)
1.2
IDSS
1.6
2 µA
Zero gate voltage drain current
V DS = 50 V, V GS = 0 V, Tj = -40 °C V DS = 50 V, V GS = 0 V, Tj = 25 °C V DS = 50...
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| Datasheet |
 BUZ101SL Datasheet - 132.20KB |
| Part Number | Description |
|---|---|
 Siemens |
Power Transistor BUZ 101 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type BUZ 101 VDS 50 V ID 29 A RDS(on) 0.06 Ω Maximum Ratings Parameter Continuous drain current TC = 31 °C Pulsed drain current TC = 25 °C Avalanche energy, single pulse ID = 29 A, VDD = 25 V, RGS = 25 Ω L = 83 µH, Tj = 25 °C Reverse diode dv/dt IS = 29 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C Gate source voltage Power dissipation TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category,... |
 Inchange Semiconductor |
N-Channel MOSFET Transistor ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 50 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 29 A IDM Drain Current-Single Pluse 116 A PD Total Dissipation @TC=25℃ 100 W TJ Max. Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 1.5 UNIT ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL ... |
 Siemens Semiconductor Group |
Power Transistor BUZ 101L SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/dt rated • Low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Pin 1 G Pin 2 D Pin 3 S Type BUZ 101L VDS 50 V ID 29 A RDS(on) 0.06 Ω Package TO-220 AB Ordering Code C67078-S1355-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 29 Unit A ID IDpuls 116 TC = 31 °C Pulsed drain current TC = 25 °C Avalanche energy, single pulse EAS 70 dv/dt 6 mJ ID = 29 A, VDD = 25 V, RGS = 25 Ω L = 83 µH, Tj = 25 °C Reverse diode dv/dt kV/µs IS = 29 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C Gate source voltage Gate-source peak voltage,aperiodic... |
Siemens Semiconductor Group |
Power Transistor Preliminary data BUZ 101 S SPP22N05 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • 175°C operating temperature Pin 1 G Type BUZ 101 S Pin 2 D Pin 3 S VDS 55 V ID 22 A RDS(on) 0.06 Ω Package TO-220 AB Ordering Code Q67040-S4013-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 22 16 Unit A ID TC = 25 °C TC = 100 °C Pulsed drain current IDpuls 88 TC = 25 °C Avalanche energy, single pulse EAS 90 mJ ID = 22 A, VDD = 25 V, RGS = 25 Ω L = 372 µH, Tj = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Reverse diode dv/dt IAR EAR dv/dt 22 5.5 A mJ kV/µs IS = 22 A, VDS = 40 V, diF/dt ... |
Siemens Semiconductor Group |
Power Transistor Preliminary data BUZ 101SL-4 SIPMOS ® Power Transistor • Quad-channel • Enhancement mode • Logic level • Avalanche-rated • dv/dt rated Type BUZ 101SL-4 VDS 55 V ID 4.1 A RDS(on) 0.075 Ω Package P-DSO-28 Ordering Code C67078-S. . . .- . . Maximum Ratings Parameter Continuous drain current one channel active Symbol Values 4.1 Unit A ID IDpuls 16.4 TA = 25 °C Pulsed drain current one channel active TA = 25 °C Avalanche energy, single pulse EAS 90 dv/dt 6 mJ ID = 4.1 A, VDD = 25 V, RGS = 25 Ω L = 10.7 mH, Tj = 25 °C Reverse diode dv/dt kV/µs IS = 4.1 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C Gate source voltage Power dissipation ,one channel active VGS Ptot ± 14 2.4 V W... |