| Description | Preliminary data BUZ 101SL-4 SIPMOS ® Power Transistor • Quad-channel • Enhancement mode • Logic level • Avalanche-rated • dv/dt rated Type BUZ 101SL-4 VDS 55 V ID 4.1 A RDS(on) 0.075 Ω Package P-DSO-28 Ordering Code C67078-S. . . .- . . Maximum Ratings Parameter Continuous drain current o... |
| Features |
ng point 1) Thermal resistance, junction - ambient 2) Values typ. max. tbd 62.5 K/W Unit
RthJS RthJA
-
1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer,70µm thick) copper area for Drain connection. PCB is vertical without blown air.
2) one channel active
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit
V(BR)DSS
55 1.6 0.1 10 0.06 2
V
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS(th)
1.2
VGS=VDS, ID = 30 µA
Zero gate voltage drain curr...
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| Datasheet |
 BUZ101SL-4 Datasheet - 90.24KB |
| Part Number | Description |
|---|---|
 Siemens Semiconductor Group |
Power Transistor BUZ 101 SL SPP20N05L SIPMOS ® Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS 55 V ID 20 A RDS(on) 0.07 Ω Package Ordering Code BUZ 101 SL TO-220 AB Q67040-S4012-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 25 °C TC = 100 °C ID A 20 14 Pulsed drain current TC = 25 °C IDpuls 80 E AS Avalanche energy, single pulse ID = 20 A, V DD = 25 V, RGS = 25 Ω L = 450 µH, Tj = 25 °C mJ 90 IAR E AR Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Reverse diode dv/dt IS = 20 A, VDS = 40 V, ... |