| Description | N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: BSP030 in SOT223. 2. Features s TrenchMOS™ technology s Fast switching s Low on-state resistance s Logic level compatible s Surface mount package. 3. Applications s Motor and... |
| Features |
s TrenchMOS™ technology s Fast switching s Low on-state resistance s Logic level compatible s Surface mount package.
3. Applications
s Motor and actuator driver
c
c s Battery management s High speed, low resistance switch.
4. Pinning information
Table 1: Pinning - SOT223, simplified outline and symbol
Pin Description
Simplified outline
1 gate (g) 2 drain (d)
4
3 source (s)
4 drain (d)
03ab45
1 23
SOT223
Symbol
d
g
03ab30
s
N-channel MOSFET
1. TrenchMOS is a trademark of Royal Philips Electronics.
Philips Semiconductors
BSP030
N-channel enhancement mode field-effect transistor
5....
|
| Datasheet |
 BSP030 Datasheet - 155.04KB |
| Part Number | Description |
|---|---|
 NXP |
P-channel enhancement mode vertical D-MOS transistor 4 d DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a 4-pin plastic SOT223 SMD package. g CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. s 1 Top view 2 3 MAM121 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA SYMBOL VDS VSD VGS VGSth ID RDSon Ptot PARAMETER drain-source voltage (DC) source-drain diode forward voltage gate-source voltage (DC) gate-source threshold voltage drain current (DC) drain-source on-state resistance total power dissipation ID = −1 mA; VDS = VGS Ts = 100 °C Ts = 100 °C IS = −1.25 A CONDITIONS − − − −1 − − MIN. MAX. −30 −1.3 ±20 −2.... |