| Description | 4 d DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a 4-pin plastic SOT223 SMD package. g CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. s 1 Top view 2 3 MAM121 Fig.1 Si... |
| Features |
• High speed switching • No secondary breakdown • Very low on-state resistance. APPLICATIONS • Motor and actuator drivers • Power management • Synchronized rectification. handbook, halfpage BSP090 PINNING - SOT223 PIN 1 2 3 4 SYMBOL g d s d gate drain source drain DESCRIPTION 4 d DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a 4-pin plastic SOT223 SMD package. g CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. s 1 Top view 2 3 MAM121 Fig.1 Simplified outline and ... |
| Datasheet |
 BSP090 Datasheet - 124.07KB |
| Part Number | Description |
|---|---|
 NXP |
N-Channel MOSFET N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: BSP030 in SOT223. 2. Features s TrenchMOS™ technology s Fast switching s Low on-state resistance s Logic level compatible s Surface mount package. 3. Applications s Motor and actuator driver c c s Battery management s High speed, low resistance switch. 4. Pinning information Table 1: Pinning - SOT223, simplified outline and symbol Pin Description Simplified outline 1 gate (g) 2 drain (d) 4 3 source (s) 4 drain (d) 03ab45 1 23 SOT223 Symbol d g 03ab30 s N-channel MOSFET 1. TrenchMOS is a trademark of Royal Philips Electronics. Philips Semiconductors BSP030... |