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| Datasheet |
 BT40T60AKF Datasheet - 1.28MB |
| Part Number | Description |
|---|---|
 Huajing Microelectronics |
Insulated gate bipolar transistor ... |
Huajing Microelectronics |
Insulated gate bipolar transistor BT40T60 ANFD ○R BT40T60 ANFD FS IGBT ， ，。 RoHS 。 ● FS ，； ● ：VCE(sat),TYP=1.8V @IC=40A,VGE=15V ； VCES IC Ptot （TC=25℃） VCE(sat) 600 40 280 1.8 ：TO-3P（N） V A W V ● ● ● ● （，TC= 25℃） VCES - VGES - IC @TC=25℃ @TC=100℃ ICMa1 @TC=25℃ IF @TC=100℃ IFM @TC=25℃ PD @TC=100℃ @TA=25℃ TJ Tstg TL ... |
Huajing Microelectronics |
Silicon FS Trench IGBT VCES 600 V Using HUAJING's proprietary trench design and advanced Field Stop (FS) IC 40 A technology, offering superior conduction and switching performances. Ptot （TC=25℃） 280 W VCE(sat) 1.9 V Features： l FS Trench Technology, Positive temperature coefficient l Low saturation voltage: VCE(sat), typ= 1.9V @ IC = 40A and TC = 25°C l RoHS Compliant Applications： l Welding l Solar Inverter l UPS Absolute Maximum Ratings（Tj= 25℃ unless otherwise specified）： Symbol Parameter Rating VCES VGES IC ICMa1 IF Collector-Emitter Voltage Gate- Emitter Voltage Collector Current@TC=25℃ Collector Current @TC = 100 °C Pulsed Collector Current@TC=25℃ Diode Continuous Forward Current @TC = ... |