| Description | SOT-23 (SOT-23 Field Effect Transistors) GMS2302AL N-Channel Enhancement-Mode MOS FETs N MOS ■MAXIMUM RATINGS Characteristic Symbol Drain-Source Voltage - Gate- Source Voltage - Drain Current (continuous) - Drain Current (pulsed) - Total Device Dissipation TA=25℃ 25℃ Junction BVDSS VGS ... |
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| Datasheet |
 A2SHB Datasheet - 1.49MB |
| Part Number | Description |
|---|---|
 Powerchip Semiconductor |
256Mb DDR SDRAM A2S56D20CTP is a 4-bank x 16,777,216-word x 4-bit, A2S56D30CTP is a 4-bank x 8,388,608-word x 8bit, A2S56D40CTP is a 4-bank x 4,194,304-word x 16bit double data rate synchronous DRAM , with SSTL_2 interface. All control and address signals are referenced to the rising edge of CLK. Input data is registered on both edges of data strob , and output data and data strobe are referenced on both edges of CLK. The A2S56D20/30/40 CTP achieves very high speed clock rate up to 200 MHz . FEATURES - Vdd=Vddq=2.5V ± 0.2V power supply for -6,-75. -Vdd=Vddq=2.6V ± 0.1V power supply for -5. - Double data rate architecture ; two data transfers per clock cycle. - Bidirectional , data strob (DQS) is transmit... |
Powerchip Semiconductor |
256Mb DDR SDRAM A2S56D20CTP is a 4-bank x 16,777,216-word x 4-bit, A2S56D30CTP is a 4-bank x 8,388,608-word x 8bit, A2S56D40CTP is a 4-bank x 4,194,304-word x 16bit double data rate synchronous DRAM , with SSTL_2 interface. All control and address signals are referenced to the rising edge of CLK. Input data is registered on both edges of data strob , and output data and data strobe are referenced on both edges of CLK. The A2S56D20/30/40 CTP achieves very high speed clock rate up to 200 MHz . FEATURES - Vdd=Vddq=2.5V ± 0.2V power supply for -6,-75. -Vdd=Vddq=2.6V ± 0.1V power supply for -5. - Double data rate architecture ; two data transfers per clock cycle. - Bidirectional , data strob (DQS) is transmit... |
Powerchip Semiconductor |
256Mb DDR SDRAM A2S56D20CTP is a 4-bank x 16,777,216-word x 4-bit, A2S56D30CTP is a 4-bank x 8,388,608-word x 8bit, A2S56D40CTP is a 4-bank x 4,194,304-word x 16bit double data rate synchronous DRAM , with SSTL_2 interface. All control and address signals are referenced to the rising edge of CLK. Input data is registered on both edges of data strob , and output data and data strobe are referenced on both edges of CLK. The A2S56D20/30/40 CTP achieves very high speed clock rate up to 200 MHz . FEATURES - Vdd=Vddq=2.5V ± 0.2V power supply for -6,-75. -Vdd=Vddq=2.6V ± 0.1V power supply for -5. - Double data rate architecture ; two data transfers per clock cycle. - Bidirectional , data strob (DQS) is transmit... |
 SLS SEMICONDUCTOR |
N-Channel MOSFET SLS SEMICONDUCTOR (SHENZHEN) CO.,LTD. SOT-23 /SOT-23 Plastic-Encapsulate MOSFETS SLS2302(N-Channel Enhancement mode Field Effect Transistor) /MARKING: A2SHB /Features： 1、 ； 2、 ； /Applications： DC-DC 。 /Absolute maximum ratings(Ta=25℃) /Parameter -/Drain-Source Voltage -/Gate-Source Voltage （）/Continuous Drain Current /Power Dissipation / Thermal Resistance Junction to Ambient /Junction Temperature /Storage Temperature / Symbol VDS VGS ID PD RθJA Tj Tstg /Value 20 ±8 2.1 0.35 350 150 -55～150 /Unit V V A W ℃/mW ℃ ℃ /Electrical characteristics (Ta=25℃) /Static Characteristics - ... |
 Low Power Semi |
N-Channel MOSFET The LPM2302 is N-channel logic enhancement mode power field effect transistor, which are produced by using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for low voltage applications, notebook computer power management and other battery powered circuits where high-side switching are needed. Ordering Information LPM2302- □ □ □ F: Pb-Free Package Type B3: SOT23-3 Features ■ 20V/3.5A, RDS(ON)=50mΩ(Typ.)@VGS=4.5V ■ 20V/3.0A, RDS(ON)=75mΩ(Typ.)@VGS=2.5V ■ Super high density cell design for extremely low RDS(ON) ■ SOT23 Package Applications Portable Media Players Cellular and... |
 HAOHAI |
N-Channel MOSFET 3.7A, 20V N N N-Channel Enhancement Mode Field Effect Transistor SMD Features ■20V, 3.7A, RDS(ON)=50mΩ @ VGS=4.5V ■High dense cell design for extremely low RDS(ON) ■Rugged and reliable ■Lead free product is acquired ■SOT-23 Package ■Marking Code: A2SHB Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Internal Block Diagram D HNM2302ALB（SOT-23） D HNM2302ALB N-Channel MOSFETs HNM2302ALB N-Channel Enhancement Mode Field Effect Transistor 2302 SI2302 AO2302 GMS2302 （） G S SOT-23 S G SOT-23 DEVICE MARKING: A2SHB ■ MAXIMUM RATINGS Characteristic Drain-Source Voltage - Gate- Source Voltage - Drain Current (continuous) - Drain Current (pulsed)... |
 Zentrum Mikroelektronik Dresden |
Release Notes IC Revision C of modification The telegram reception under worst case capacitive and worst case inductive network conditions was improved in response to suggestions of the technical committee of the AS-International Association. The digital MAN-code communication channel does now support a more cost effective two-wire data transfer between the A²SI and the master control logic. It is not necessary to rely on the additional ‘Receive_Strobe’ signal, which is supplied at the parameter port P2 in Master Mode to verify the correctness of the MAN output signal at the LED port. The MAN signal is now distinctively disturbed if an erroneous telegram was detected at the AS-i input. This allows to spare at least one... |
Zentrum Mikroelektronik Dresden |
Advanced AS-Interface IC A²SI-E is a monolithic CMOS integrated circuit certified for AS-i (Actuator Sensor-interface) networks. AS-i networks are intended for industrial automation. The main advantage of AS-i solutions is that actuators and sensors are connected using a twowire unshielded cable that is easy to install. This cable transports both power and information/data. AS-i network communication is based on the master-slave principle. The network can be extended (to cable lengths greater than 100m) by using the A²SI-E in the repeater mode configuration. Furthermore, the A²SI-E is used as slave interface to sensors / actuators and as master interface. AS-i is a standard for the automation industry based on IEC 6... |
Zentrum Mikroelektronik Dresden |
Low End Device AS-Interface IC A²SI-Lite (A²SI-L) is a monolithic CMOS integrated circuit certified for AS-i (Actuator Sensor-interface) networks. AS-i networks are intended for industrial automation. This integrated circuit is dedicated to be used as simplified interface IC for key control panels, simple sensors and small actuators. The main advantage of AS-i solutions is that actuators and sensors are connected using a twowire unshielded cable that is easy to install. This cable transports both power and information/data. AS-i network communication is based on the master-slave principle. The network can be extended (to cable lengths greater than 100m) by using the A²SI or A²SI-E in the repeater mode configuration. AS-i ... |