|
Description
|
R
www.jdsemi.cn
ShenZhen Jingdao Electronic Co.,Ltd.
E13005SDL
Bipolar Junction Transistor
◆Si NPN ◆RoHS COMPLIANT
1．APPLICATION
Mainly used for 110V power Fluorescent Lamp、 Electronic Ballast，etc
2．FEATURES
Intergrated antiparallel collector-emitter diode Features of good high temperature H...
|
|
Features
|
Intergrated antiparallel collector-emitter diode Features of good high temperature High switching speed
3．PACKAGE
1 VD
TO-126D
4．Electrical Characteristics
4.1 Absolute Maximum Ratings
1 Base(B) 2 Collector(C) 3 Emitter(E)
Tamb= 25℃ unless specified
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
Collector-Emittor Voltage
Emittor- Base Voltage
Collector Current
Power Dissipation
Ta=25℃ Tc=25℃
Junction Temperature
Storage Temperature
4.2 Electrical Parameter
Tamb= 25℃ unless specified
PARAMETER
SYMBOL
Collector-Base Voltage Collector-Emittor Voltage Emittor-Base Voltage C...
|
|
Datasheet
|
 E13005SDL Datasheet - 123.80KB |
